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2SD1435


Part Number 2SD1435
Manufacturer Hitachi Semiconductor
Title Silicon NPN Transistor
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2SD1430 : ·High Breakdown Voltage- : VCBO= 1500V (Min) ·High Switching Speed ·Low Saturation Voltage ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Color TV horizontal deflection output applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1500 V VCEO Collector-Emitter Voltage 600 V VEBO Emitter-Base Voltage 5 V IC Collector Current- Continuous 3.5 A IE Emitter Current PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 3.5 A 80 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website:www.iscsemi.com 1 isc & iscsemi is registe.

2SD1430 : J SILICON NPNTRIPLE DIFFUSED MESA TYPE . 2SD1 430 COLOR TV HORIZONTAL OUTPUT APP LICATIONS. FFATTJRFS • . High Voltage : VCB0=1500V . Low Saturation Voltage : V C E(sat)=4V ( Typ.) (I C=3A, Ib=0.8A) . High Speed : tf=1.0AS (Max .) (I C P=3A, I B l(end)=0.8A) . Glass Passivated Collector-B ase Junction MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current SYMBOL VcBO VCEO VEBO ic RATING 1500 600 5 3.5 UNIT V V V A Unit in mm 1&0MAX. 0a6±O.2 1 .4 ^zc^- , X s o i o — _T" J 1.8 MAX. I r 1 4.0 ±a3 , 2.3 MAX s Z* S ^* od 1.2 MAX . H 1 12 3 X 5.45 s —s 5° 00 c5 Ih-r CO C\2 +[ (fl .

2SD1430 : ·With TO-3PH package ·High voltage ,high speed ·Low collector saturation voltage APPLICATIONS ·Designed for use in color TV horizontal output applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter Fig.1 simplified outline (TO-3PH) and symbol DESCRIPTION Absolute maximum ratings (Ta=25 ) SYMBOL VCBO VCEO VEBO IC IE PD Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Emitter current Total power dissipation Junction temperature Storage temperature TC=25 Open emitter Open base Open collector CONDITIONS VALUE 1500 600 5 3.5 -3.5 80 150 -55~150 UNIT V V V A A W SavantIC Semiconductor Product Specification Silico.

2SD1431 : A: ) 2SD1431 vo f SILICON NPNTRIPLE DIFFUSED MESA TYPE COLOR TV HORIZONTAL OUTPUT APPLICATIONS. FEATURES . High Voltage : VCBo=1500V . Low Saturation Voltage . High Speed : vCE(sat)=5V(Max.) (I C=4A, I B=0.8A) : tf=l . 0As(Max. . Glass Passivated Collector-Base Junction Unit in mm 160MAX. 03.6 ±0.2 1.5 MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC SYMBOL RATING UNIT Collector-Base Voltage VCBO 1500 Collector-Emitter Voltage Emitter-Base Voltage Collector Current Emitter Current Collector Power Dissipation (Tc=25°C) VCEO v EBO ic IE ?C 600 -5 80 1. BASE 2. COLLECTOR (HEAT SINK) 3. EMITTER Junction Temperature Storage Temperature Range gtg ELECTRICAL CHARACTERISTICS (Ta=25 C) .

2SD1431 : ·With TO-3PH package ·High voltage ,high speed ·Low collector saturation voltage APPLICATIONS ·Designed for use in color TV and CRT display horizontal output applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION Fig.1 simplified outline (TO-3PH) and symbol Absolute maximum ratings (Ta=25 ) SYMBOL VCBO VCEO VEBO IC PD Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Total power dissipation Junction temperature Storage temperature TC=25 Open emitter Open base Open collector CONDITIONS VALUE 1500 600 5 5 80 150 -55~150 UNIT V V V A W SavantIC Semiconductor Product Specification Silicon NPN Power.

2SD1431 : ·High Speed tf= 1.0 us(MIN) @ IC= 4A , IB(end)= 0.8A ·High Voltage VCBO=1300V ·Low Saturation Voltage VCE(sat)5.0V@ IC = 4A; IB = 0.8A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for color TV horizontal output applications ABSOLUTE MAXIMUM RATINGS (Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1300 V VCEO Collector-Emitter Voltage 600 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 5 A IE Emitter Current PC Collector Power Dissipation @TC=25℃ Tj Junction Temperature 5 A 80 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SD1431 isc website:www.iscsemi.com .

2SD1432 : : SILICON NPN TRIPLE DIFFUSED MESA TYPE COLOR TV HORIZONTAL OUTPUT APPLICATIONS. FEATURES . High Voltage : VCBO=1500V . Low Saturation Voltage . High Speed : v CE(sat)=5V (Max.) (I C =5A, : tf=1.0^s (Max.) . Glass Passivated Collector-Base Junction I B=1A) Unit in ram 1S0MAX. 03.6±CL2 MAXIMUM RATINGS (Ta=25°c) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Emitter Current Collector Power Dissipation (Tc=25°C) SYMBOL vCBO v CEO VEBO ic IE RATING 1500 600 -6 80 UNIT 1. BASE 2. COLLECTOR (HEAT SINK; 3. EMITTER Junction Temperature 150 Storage Temperature Range stg ELECTRICAL CHARACTERISTICS (Ta=25°C) -55-150 TOSHIBA 2.

2SD1432 : ·High Breakdown Voltage- : VCBO= 1500V (Min) ·High Switching Speed ·Low Saturation Voltage ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Color TV horizontal deflection output applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1500 V VCEO Collector-Emitter Voltage 600 V VEBO Emitter-Base Voltage 5 V IC Collector Current- Continuous 6 A IE Emitter Current PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 6 A 80 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website:www.iscsemi.com 1 isc & iscsemi is registered .

2SD1432 : ·With TO-3PH package ·High voltage ,high speed ·Low collector saturation voltage APPLICATIONS ·Designed for use in TV and CRT display horizontal output applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter Fig.1 simplified outline (TO-3PH) and symbol DESCRIPTION Absolute maximum ratings (Ta=25 ) SYMBOL VCBO VCEO VEBO IC PD Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Total power dissipation Junction temperature Storage temperature TC=25 Open emitter Open base Open collector CONDITIONS VALUE 1500 600 5 6 80 150 -55~150 UNIT V V V A W SavantIC Semiconductor Product Specification Silicon NPN Power Transi.

2SD1433 : ·High Breakdown Voltage- : VCBO= 1500V (Min) ·High Switching Speed ·Low Saturation Voltage ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Color TV horizontal deflection output applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1500 V VCEO Collector-Emitter Voltage 600 V VEBO Emitter-Base Voltage 5 V IC Collector Current- Continuous 7 A IE Emitter Current PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 7 A 80 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website:www.iscsemi.com 1 isc & iscsemi is registered .

2SD1433 : : SILICON NPNTRIPLE DIFFUSED MESA TYPE COLOR TV HORIZONTAL OUTPUT APPLICATIONS. FEATURES . High Voltage VCBO=1500V Low Saturation Voltage : V CE (sat)=5V (Max.) (I C =6A, High Speed : tf=1.0^s (Max.) Glass Passivated Collector-Base Junction I B=1.2A) Unit in nun 1&0MAX. 03.6 ±0.2 I- ' MAXIMUM RATINGS (Ta=25 C) CHARACTERISTIC SYMBOL RATING UNIT Collector-Base Voltage Collector-Emitter Voltage VcBO VcEO 1500 600 Emitter-Base Voltage VEBO Collector Current Emitter Current Collector Power Dissipation (Tc=25°C) ic IE -7 80 1. BASE 2. COLLECTOR (HEAT SINK) & EMITTER Junction Temperature Storage Temperature Range [ stg 150 -55-150 TOSHIBA 2-16D1A Weight : 5.2g ELECTRICAL CHARA.

2SD1433 : ·With TO-3PH package ·High voltage ,high speed ·Low collector saturation voltage APPLICATIONS ·Designed for use in TV and CRT horizontal output applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter Fig.1 simplified outline (TO-3PH) and symbol DESCRIPTION Absolute maximum ratings (Ta=25 ) SYMBOL VCBO VCEO VEBO IC PD Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Total power dissipation Junction temperature Storage temperature TC=25 Open emitter Open base Open collector CONDITIONS VALUE 1500 600 5 7 80 150 -55~150 UNIT V V V A W SavantIC Semiconductor Product Specification Silicon NPN Power Transistors CH.

2SD1435 : ·With TO-3PN package ·DARLINGTON ·High DC current gain ·Complement to type 2SB1031 APPLICATIONS ·For low frequency power amplifier and high current switching applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter Fig.1 simplified outline (TO-3PN) and symbol DESCRIPTION Absolute maximum ratings(Tc=25 ) SYMBOL VCBO VCEO VEBO IC ICM IB PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-Peak Base current Collector power dissipation Junction temperature Storage temperature TC=25 Open emitter Open base Open collector CONDITIONS VALUE 100 100 7 15 20 3 100 150 -55~150 UNIT V V V A A A W SavantIC .

2SD1435K : www.DataSheet4U.com www.DataSheet4U.com .

2SD1436 : 2SD1436(K) Silicon NPN Triple Diffused Application Power switching complementary pair with 2SB1032(K) Outline TO-3P 2 1 1. Base 2. Collector (Flange) 3. Emitter 1 1.5 kΩ (Typ) 130 Ω (Typ) 3 2 3 2SD1436(K) Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Collector power dissipation Junction temperature Storage temperature Note: 1. Value at TC = 25°C. Symbol VCBO VCEO VEBO IC I C (peak) PC * Tj Tstg 1 Rating 120 120 7 10 15 80 150 –55 to +150 Unit V V V A A W °C °C Electrical Characteristics (Ta = 25°C) Item Symbol Min 120 7 — — 1000 — — — — — — Typ — — — — — — — — — 0..

2SD1436 : ·High DC Current Gain : hFE= 1000(Min.)@ IC= 5A, VCE= 3V ·Collector-Emitter Breakdown Voltage- : V(BR)CEO = 120V(Min) ·Complement to Type 2SB1032 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for power switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 120 V VCEO Collector-Emitter Voltage 120 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 10 A ICM Collector Current-Peak PC Collector Power Dissipation @TC=25℃ Tj Junction Temperature 15 A 80 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SD1436 isc website:www.iscsemi..




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