Part Number D1710
Manufacturer Wing Shing Computer
Title Silicon Diffused Power Transistor
Description Silicon Diffused Power Transistor Highvoltage,high-speed switching npn transistors in a plastic package,pimarily for use in horizontal deflectio...
Features ssipation Storage temperature Junction temperature CONDITIONS VBE = 0V Tmb 25 MIN -55 - MAX 1500 600 5 10 50 150 150 UNIT V V A A A A W ELECTRICAL CHARACTERISTICS SYMBOL ICE ICES VCEOsust VCEsat VBEsat hFE VF fT Cc ts tf PARAMETER Collector cut-off current Collector-emitter sustaining volta...

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Datasheet D1710 PDF File

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D1716 : ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 160V(Min.) ·Good Linearity of hFE ·Wide Area of Safe Operation ·Complement to Type 2SB1161 APPLICATIONS ·Designed for high power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 160 V VCEO Collector-Emitter Voltage 160 V VEBO Emitter-Base Voltage 5V IC Collector Current-Continuous 12 A ICP Collector Current-Pulse Collector Power Dissipation @ TC=25℃ PC Collector Power Dissipation @ Ta=25℃ TJ Junction Temperature 20 A 120 W 3 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc 1 INCHANGE Semiconductor isc Silicon NPN Power Transistor .

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