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K2233

Toshiba Semiconductor
Part Number K2233
Manufacturer Toshiba Semiconductor
Description N-Channel MOSFET
Published Jan 22, 2008
Detailed Description www.DataSheet4U.com 2SK2233 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L –π−MOSV) 2 2SK2233 Chopper R...
Datasheet PDF File K2233 PDF File

K2233
K2233

Overview
www.
DataSheet4U.
com 2SK2233 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L –π−MOSV) 2 2SK2233 Chopper Regulator, DC−DC Converter and Motor Drive Applications 4 V gate drive Low drain−source ON resistance High forward transfer admittance Low leakage current Enhancement−mode : RDS (ON) = 0.
022 Ω (typ.
) : |Yfs| = 27 S (typ.
) Unit: mm : IDSS = 100 µA (max) (VDS = 60 V) : Vth = 0.
8~2.
0 V (VDS = 10 V, ID = 1 mA) Maximum Ratings (Ta = 25°C) Characteristics Drain−source voltage Drain−gate voltage (RGS = 20 kΩ) Gate−source voltage Drain current DC (Note 1) Symbol VDSS VDGR VGSS ID IDP PD EAS IAR EAR Tch Tstg Rating 60 60 ±20 45 180 100 246 45 10 150 −55~150 Unit V V V A A W mJ A mJ °C °C 1.
GATE 2.
DRAIN (HEAT SINK) 3.
SOURCE Pulse (Note 1) Drain power dissipation (Tc = 25°C) Single pulse avalanche energy (Note 2) Avalanche current Repetitive avalanche energy (Note 3) Channel temperature Storage temperature range JEDEC JEITA TOSHIBA ― ― 2-16C1B Weight: 4.
6 g (typ.
) Thermal Characteristics Characteristics Thermal resistance, channel to case Thermal resistance, channel to ambient Symbol Rth (ch−c) Rth (ch−a) Max 1.
25 50 Unit °C / W °C / W Note 1: Please use devices on condition that the channel temperature is below 150°C.
Note 2: VDD = 25 V, Tch = 25°C (initial), L = 165 µH, RG = 25 Ω, IAR = 45 A Note 3: Repetitive rating: Pulse width limited by maximum channel temperature This transistor is an electrostatic sensitive device.
Please handle with caution.
1 2002-07-31 www.
DataSheet4U.
com 2SK2233 Electrical Characteristics (Ta = 25°C) Characteristics Gate leakage current Drain cut−off current Drain−source breakdown voltage Gate threshold voltage Drain−source ON resistance Forward transfer admittance Input capacitance Reverse transfer capacitance Output capacitance Rise time Symbol IGSS IDSS V (BR) DSS Vth RDS (ON) |Yfs| Ciss Crss Coss tr ton tf toff Qg Qgs Qgd VDD ≈ 48 V, VGS = 10 V, ID = 45 A VDS = 10 V, VGS = 0 V, f = 1 MHz Test Condition VGS = ±1...


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