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K241

Toshiba
Part Number K241
Manufacturer Toshiba
Description 2SK241
Published Apr 2, 2008
Detailed Description TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK241 2SK241 FM Tuner, VHF and RF Amplifier Applications ...
Datasheet PDF File K241 PDF File

K241
K241

Overview
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK241 2SK241 FM Tuner, VHF and RF Amplifier Applications Unit: mm • Low reverse transfer capacitance: Crss = 0.
035 pF (typ.
) • Low noise figure: NF = 1.
7dB (typ.
) • High power gain: GPS = 28dB (typ.
) • Recommend operation voltage: 5~15 V Maximum Ratings (Ta = 25°C) Characteristics Drain-source voltage Gate-source voltage Drain current Drain power dissipation Channel temperature Storage temperature range Symbol VDS VGS ID PD Tch Tstg Rating 20 ±5 30 200 125 −55~125 Unit V V mA mW °C °C Electrical Characteristics (Ta = 25°C) JEDEC ― JEITA ― TOSHIBA 2-4E1D Weight: 0.
13 g (typ.
) Characteristics Symbol Test Condition Min Typ.
Max Unit Gate leakage current Drain-source voltage Drain current Gate-source cut-off voltage Forward transfer admittance Input capacitance Reverse transfer capacitance Power gain Noise figure IGSS VDSX IDSS VGS (OFF) Yfs Ciss Crss Gps NF VDS = 0, VGS = ±5 V VGS = −4 V, ID = 100 µA VDS = 10 V, VGS = 0 VDS = 10 V, ID = 100 µA VDS = 10 V, VGS = 0, f = 1 kHz (Note) VDS = 10 V, VGS = 0, f = 1 MHz VDS = 10 V, VGS = 0, f = 100 MHz (Figure 1)  20 1.
5           10 3.
0 0.
035 28 1.
7 ±50  14 −2.
5   0.
050  3.
0 nA V mA V mS pF pF dB dB Note: IDSS classification O: 1.
5~3.
5, Y: 3.
0~7.
0, GR: 6.
0~14.
0 1 2003-03-27 2SK241 L1: 1.
0 mmφ silver plated copper wire 4.
0 T, 8 mmφ ID TAP at 1.
0 T from coil end L2: 1.
0 mmφ silver plated copper wire 3.
0 T, 8 mmφ ID, 10 mm length Figure 1 Gps, NF Test Circuit 2 2003-03-27 2SK241 3 2003-03-27 2SK241 4 2003-03-27 2SK241 5 2003-03-27 2SK241 6 2003-03-27 2SK241 RESTRICTIONS ON PRODUCT USE 000707EAA • TOSHIBA is continually working to improve the quality and reliability of its products.
Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress.
It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply...


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