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D1302

Panasonic
Part Number D1302
Manufacturer Panasonic
Description 2SD1302
Published Apr 16, 2008
Detailed Description Transistors 2SD1302 Silicon NPN epitaxial planar type For low-voltage output amplification For muting For DC-DC convert...
Datasheet PDF File D1302 PDF File

D1302
D1302

Overview
Transistors 2SD1302 Silicon NPN epitaxial planar type For low-voltage output amplification For muting For DC-DC converter ■ Features • Low collector-emitter saturation voltage VCE(sat) • Low ON resistance Ron • High forward current transfer ratio hFE 0.
7±0.
1 Unit: mm 5.
0±0.
2 4.
0±0.
2 0.
7±0.
2 12.
9±0.
5 ■ Absolute Maximum Ratings Ta = 25°C Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) www.
DataSheet4U.
com Emitter-base voltage (Collector open) Collector current Peak collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Rating 25 20 12 0.
5 1 600 150 −55 to +150 Unit V V V A A mW °C °C 0.
45+0.
15 –0.
1 2.
5+0.
6 –0.
2 1 2 3 2.
5+0.
6 –0.
2 0.
45+0.
15 –0.
1 5.
1±0.
2 1: Emitter 2: Collector 3: Base TO-92-B1 Package ■ Electrical Characteristics Ta = 25°C ± 3°C Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector-base cutoff current (Emitter open) Forward current transfer ratio *1 Symbol VCBO VCEO VEBO ICBO hFE1 *2 hFE2 Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency Collector output capacitance (Common base, input open circuited) ON resistanse *3 VCE(sat) VBE(sat) fT Cob Ron Conditions IC = 10 µA, IE = 0 IC = 1 mA, IB = 0 IE = 10 µA, IC = 0 VCB = 25 V, IE = 0 VCE = 2 V, IC = 0.
5 A VCE = 2 V, IC = 1 A IC = 0.
5 A, IB = 20 mA IC = 0.
5 A, IB = 50 mA VCB = 10 V, IE = −50 mA, f = 200 MHz VCB = 10 V, IE = 0, f = 1 MHz 200 10 1.
0 200 60 0.
13 0.
40 1.
2 V V MHz pF Ω Min 25 20 12 100 800 Typ Max Unit V V V nA  Note) 1.
Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2.
*1: Pulse measurement *2: Rank classification *3: Ron Measurement circuit 1 kΩ Rank hFE1 R 200 to 350 S 300 to 500 T 400 to 800 IB = 1 mA f = 1 kHz V = 0.
3 V VB VV VA Ron = VB × 1 000 (Ω) VA − VB 2.
3±0.
2 Publication date: January...


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