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DB3

HY ELECTRONIC
Part Number DB3
Manufacturer HY ELECTRONIC
Description SILICON BIDIRECTIONAL DIACS
Published May 31, 2008
Detailed Description DB3,DB4,DB6 SILICON BIDIRECTIONAL DIACS FEATURES ●Three way layer two terminal, axial lead , POWER DISSIPATION DO- 41 ...
Datasheet PDF File DB3 PDF File

DB3
DB3

Overview
DB3,DB4,DB6 SILICON BIDIRECTIONAL DIACS FEATURES ●Three way layer two terminal, axial lead , POWER DISSIPATION DO- 41 150 mW DO-35(GLASS) .
020 TYP.
(0.
51) 1.
083(27.
5) MIN hermetically sealed diacs are designed specifically for triggering thyrisitors .
The demonstrate low breakover current.
The breakover symmetry is within three volts(DB3,DB4) or four volts(DB6).
These diacs are intended for www.
DataSheet4U.
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,circuits for lamp 1.
0(25.
4) MIN .
034(0.
9) DIA .
028(0.
7) dimming universal motor speed control and heat control ●This diocle is also avaiable in the DO-41case.
.
205(5.
2) MAX .
107(2.
7) DIA .
080(2.
0) 1.
0(25.
4) MIN .
150(3.
8) MAX .
079 MAX (2.
0) 1.
083(27.
5) MIN Dimensions in inches and (millimeters) ABSOLUTE RATINGS PARAMETERS Power Dissipation on Printed Cir cuit(L=10mm) Repetitive Peak on-state Current TA=50℃ Tp=10uS f=100HZ TSTG/TJ -44 to+125/-40 to+110 ℃ ITRM 2.
0 A SYMBOL DB3 Pc VALUE DB4 150 DB6 mW UNITS Storage and Operating Juntion Temperature ELECTRICAL CHARACTERISTICS PAPRAMETERS SYMBOLS TEST CONDITIONS DB3 Min Breakover Voltage* VBO C=22nf** See Diagram 1 Typ Max Breakover Voltage Symmetry 1+VBOI1-VBOI Dynamic Breakover Voltage Output Voltage* Breakover Current* Rise Time* Leakage Current* 1±△V1 VO IBO tr IB C=22nf** See Diagram 1 △I=(IBO to IF=10mA) Min See FIG 1 See FIG 2 C=22nf** See FIG 3 IB=0.
5 VBO MAX See FIG 3 NOTE:* Electrical characteristics applicable in both forward and reverse directions.
** Connected in parallel with the devices.
Min Max Typ Max 5 100 1.
5 10 V uA uS uA 5 V Max 28 32 36 VALUE DB4 35 40 45 ±3 DB6 56 60 70 V V UNITS ~ 211 ~ RATING AND CHARACTERISTIC CURVES DB3,DB4,DB6 FIG.
1-CURRENT-VOLTAGE CHARACTERISTICS +IF FIG.
2-TEST CIRCUIT FOR OUTPUT VOLATGE 10mA 220V 60HZ 10KΩ 500KΩ D.
U.
T VO R=20Ω IB IB -V www.
DataSheet4U.
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5VBO △V VBO +V 0.
1uF -IF FIG.
3-TEST CIRCUIT SEE FIG.
2 ADJUST R FOR Ip=0.
5A P(mW) 90% IP 160 140 120 100 10% tr 80 60 40 20 0 0 10 20 30 40 50 60 70 80 FIG.
5-RE...


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