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2SA952

Part Number 2SA952
Manufacturer NEC
Title PNP SILICON TRANSISTOR
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Datasheet 2SA952 PDF File







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2SA950 : TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA950 2SA950 Audio Power Amplifier Applications Unit: mm · High hFE: hFE = 100~320 · 1 W output applications · Complementary to 2SC2120 Maximum Ratings (Ta = 25°C) Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range Symbol VCBO VCEO VEBO IC IB PC Tj Tstg Rating -35 -30 -5 -800 -160 600 150 -55~150 Unit V V V mA mA mW °C °C Electrical Characteristics (Ta = 25°C) JEDEC TO-92 JEITA SC-43 TOSHIBA 2-5F1B Weight: 0.21 g (typ.) Characteristics Symbol Test Condition Collector cut-o.

2SA950 : Elektronische Bauelemente 2SA950 -0.8A , -35V PNP Plastic Encapsulated Transistor RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES  1W output applications  Complementary to 2SC2120 CLASSIFICATION OF hFE (1) Product-Rank 2SA950-O 2SA950-Y Range 100-200 160-320 GH J AD B K E CF TO-92 Emitter Collector Base REF. A B C D E F G H J K Millimeter Min. Max. 4.40 4.70 4.30 4.70 12.70 - 3.30 3.81 0.36 0.56 0.36 0.51 1.27 TYP. 1.10 - 2.42 2.66 0.36 0.76  Base Collector   Emitter ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified) Parameter Symbol Rating Collector to Base Voltage Collector to Emitter Voltage Emitter to .

2SA950 : Transys Electronics L I M I T E D TO-92 Plastic-Encapsulated Transistors 2SA950 FEATURE Power dissipation TRANSISTOR (PNP) TO-92 DataSheet4U.com 1. EMITTER PCM : 0.6 W (Tamb=25℃) Collector current A ICM : -0.8 Collector-base voltage V(BR)CBO : -35 V Operating and storage junction temperature range Tj, Tstg: -55℃ to +150℃ 2. COLLECTOR 3. BASE 1 2 3 ELECTRICAL CHARACTERISTICS (Tamb=25℃ Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE(1) DC current gain hFE(2) Collector-emitter saturation voltage VCE(sat) unless otherwise spec.

2SA950 : ST 2SA950 PNP Silicon Epitaxial Planar Transistor for audio power amplifier applications. The transistor is subdivided into two group, O and Y according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations. TO-92 Plastic Package Weight approx. 0.19g Absolute Maximum Ratings (T a=25oC) Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current Base Current Power Dissipation Junction Temperature Storage Temperature Range Symbol -VCBO -VCEO -VEBO -IC -IB Ptot Tj TS G S P FORM A IS AVAILABLE Value 35 30 5 800 160 600 150 -55 to +150 Unit V V V mA mA mW OC OC РАДИОТЕХ-ТРЕЙД Тел.: (495) 795-0805 Факс:.

2SA950 : 2SA950 TRANSISTOR (PNP) TO-92 FEATURES y 1W output applications y complementary to 2SC2120 MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value VCBO Collector-Base Voltage -35 VCEO Collector-Emitter Voltage -30 VEBO Emitter-Base Voltage -5 IC Collector Current -Continuous -0.8 PC Collector Power Dissipation 0.6 Tj Junction Temperature 150 Tstg Storage Temperature -55 to +150 Units V V V A W ℃ ℃ 1.EMITTER 2. COLLECTOR 3. BASE ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current D.

2SA950 : Designed for low-frequency power amplifier applications. Pinning 1 = Emitter 2 = Collector 3 = Base Absolute Maximum Ratings(TA=25oC) Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Total Power Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC PD TJ TSTG Rating -35 -30 -5 -800 600 +150 -55 to +150 Unit V V V mA mW oC oC TO-92 .190(4.83) .170(4.33) .190(4.83) .170(4.33) .500 (12.70) Min 2o Typ 2o Typ .050 (1.27)Typ .022(0.56) .014(0.36) .100 (2.54) Typ .022(0.56) .014(0.36) 321 .148(3.76) .132(3.36) .050 5oTyp. 5oTyp. (1.27)Typ Dimensions in inches and (millimeters) Electrical Characteristic.

2SA950 : 2SA950 PNP Silicon Epitaxial Planar Transistor for audio power amplifier applications. The transistor is subdivided into two group, O and Y according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations. Absolute Maximum Ratings (Ta=25oC) Parameter Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current Base Current Power Dissipation Junction Temperature Storage Temperature Range 1. Emitter 2. Collector 3. Base TO-92 Plastic Package Weight approx. 0.19g Symbol -VCBO -VCEO -VEBO -IC -IB Ptot Tj TS Value 35 30 5 800 160 600 150 -55 to +150 Unit V V V mA mA mW OC OC Page 1 of 3 7/15/2011 Charact.

2SA950 : .

2SA952 : TO-92 PNP 。Silicon PNP transistor in a TO-92 Plastic Package.  / Features ,hFE ,VCE(sat)。 High total dissipation, high hFE and low VCE(sat). / Applications 、。 Output stage of portable radio and cassette type tape recorder, general purpose applications. / Equivalent Circuit / Pinning 1 23 PIN1:Base PIN 2:Collector PIN 3:Emitter / hFE Classifications & Marking hFE Classifications Symbol hFE Range M 90~180 L 135~270 K 200~400 http://www.fsbrec.com 1/6 2SA952 Rev.F Mar.-2016 / Absolute Maximum Ratings(Ta=25℃) Parameter Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current - Continuous Base Current – Continuous Collector Pow.

2SA952 : ST 2SA952 PNP Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into three group, M, L and K according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations. TO-92 Plastic Package Weight approx. 0.19g Absolute Maximum Ratings (T a = 25 oC) Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current Base Current Power Dissipation Junction Temperature Storage Temperature Range Symbol -VCBO -VCEO -VEBO -IC -IB Ptot Tj TS G S P FORM A IS AVAILABLE Value 30 25 5 700 150 600 150 -55 to +150 Unit V V V mA mA mW OC OC РАДИОТЕХ Тел.: (495) 795-080.

2SA953 : 2SA953(3CG953) PNP /SILICON PNP TRANSISTOR :、。/Purpose: Audio frequency amplifier and driver stage. :,hFE ,VCEO 。/Features: High total power dissipation, high hFE and high VCEO. /Absolute maximum ratings(Ta=25℃) Symbol Rating Unit VCBO -60 V VCEO -60 V VEBO -5.0 V IC -300 mA IB -60 mA PC 600 mW Tj 150 ℃ Tstg -55~150 ℃ /Electrical characteristics(Ta=25℃) Symbol Test condition ICBO IEBO hFE(1) hFE(2) VCE(sat) VBE(sat) VBE fT Cob VCB=-60V VEB=-5.0V VCE=-1.0V VCE=-1.0V IC=-300mA IC=-300mA VCE=-6.0V VCE=-6.0V VCB=-6.0V IE=0 IE=0 IC=0 IC=-50mA IC=-300mA IB=-30mA IB=-30mA IC=-10mA IC=-10mA f=1.0MHz Min 90 30 50 Rating Typ -0.15 -0.85 -0.66 100 13 Max -0.1 -0..

2SA953 : .

2SA953 : TO-92 PNP 。Silicon PNP transistor in a TO-92 Plastic Package.  / Features ,hFE ,VCEO 。 High total power dissipation, high hFE and high VCEO. / Applications 、。 Audio frequency amplifier and driver stage. / Equivalent Circuit / Pinning 1 23 PIN1:Base PIN 2:Collector PIN 3:Emitter / hFE Classifications & Marking hFE Classifications Symbol hFE Range M 90~180 L 135~270 K 200~400 http://www.fsbrec.com 1/6 2SA953 Rev.E Mar.-2016 / Absolute Maximum Ratings(Ta=25℃) Parameter Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current - Continuous Base Current – Continuous Collector Power Dissipation Junction Temperature Storage Temper.

2SA953M : 2SA953M(3CG953M) PNP /SILICON PNP TRANSISTOR :、。/Purpose: Audio frequency amplifier and driver stage. :,hFE ,VCEO 。/Features: High total power dissipation, high hFE and high VCEO. /Absolute maximum ratings(Ta=25℃) Symbol Rating Unit VCBO -60 V VCEO -60 V VEBO -5.0 V IC -300 mA IB -60 mA PC 450 mW Tj 150 ℃ Tstg -55~150 ℃ /Electrical characteristics(Ta=25℃) Symbol Test condition Min Rating Typ ICBO VCB=-60V IE=0 IEBO VEB=-5.0V IC=0 hFE(1) VCE=-1.0V IC=-50mA 90 hFE(2) VCE=-1.0V IC=-300mA 30 VCE(sat) IC=-300mA IB=-30mA -0.15 VBE(sat) IC=-300mA IB=-30mA -0.85 VBE VCE=-6.0V IC=-10mA -0.66 fT VCE=-6.0V IC=-10mA 50 100 Cob VCB=-6.0V IE=.

2SA953M : SOT-23 PNP 。Silicon PNP transistor in a SOT-23 Plastic Package. / Features ,hFE ,VCEO 。 High total power dissipation, high hFE and high VCEO. / Applications 、。 Audio frequency amplifier and driver stage. / Equivalent Circuit / Pinning 3 2 1 PIN1:Emitter PIN 2:Base PIN 3:Collector / hFE Classifications & Marking hFE Classifications Symbol hFE Range M 90~180 L 135~270 Marking H53M H53L K 200~400 H53K http://www.fsbrec.com 1/6 2SA953M Rev.E Mar.-2016 / Absolute Maximum Ratings(Ta=25℃) Parameter Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current Collector Base Collector Power Dissipation Junction Temperature Storage Temp.

2SA954 : .




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