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A1939

Toshiba Semiconductor
Part Number A1939
Manufacturer Toshiba Semiconductor
Description 2SA1939
Published Jun 17, 2008
Detailed Description 2SA1939 TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SA1939 Power Amplifier Applications Unit: mm • • Complemen...
Datasheet PDF File A1939 PDF File

A1939
A1939

Overview
2SA1939 TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SA1939 Power Amplifier Applications Unit: mm • • Complementary to 2SC5196 Recommend for 40-W high-fidelity audio frequency amplifier output stage.
www.
DataSheet4U.
com Absolute Maximum Ratings (Tc = 25°C) Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation (Tc = 25°C) Junction temperature Storage temperature range Symbol VCBO VCEO VEBO IC IB PC Tj Tstg Rating −80 −80 −5 −6 −0.
6 60 150 −55 to 150 Unit V V V A A W °C °C JEDEC JEITA ― ― TOSHIBA 2-16C1A Note: Using continuously under heavy loads (e.
g.
the application of high temperature/current/voltage and the significant change in Weight: 4.
7 g (typ.
) temperature, etc.
) may cause this product to decrease in the reliability significantly even if the operating conditions (i.
e.
operating temperature/current/voltage, etc.
) are within the absolute maximum ratings.
Please design the appro...


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