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K3667

Toshiba Semiconductor
Part Number K3667
Manufacturer Toshiba Semiconductor
Description 2SK3667
Published Jun 30, 2008
Detailed Description 2SK3667 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSVI) 2SK3667 Switching Regulator Applications •...
Datasheet PDF File K3667 PDF File

K3667
K3667

Overview
2SK3667 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSVI) 2SK3667 Switching Regulator Applications • • • • Low drain-source ON resistance: RDS (ON) = 0.
75Ω (typ.
) High forward transfer admittance: |Yfs| = 5.
5S (typ.
) Low leakage current: IDSS = 100μA (VDS = 600 V) Enhancement mode: Vth = 2.
0~4.
0 V (VDS = 10 V, ID = 1 mA) Unit: mm www.
DataSheet4U.
com Absolute Maximum Ratings (Ta = 25°C) Characteristics Drain-source voltage Drain-gate voltage (RGS = 20 kΩ) Gate-source voltage DC Drain current (Note 1) Symbol VDSS VDGR VGSS ID IDP PD EAS IAR EAR Tch Tstg Rating 600 600 ±30 7.
5 30 45 189 7.
5 4.
5 150 -55~150 A W mJ A mJ °C °C Unit V V V 1: Gate 2: Drain 3: Source Pulse (t = 1 ms) (Note 1) Drain power dissipation (Tc = 25°C) Single pulse avalanche energy (Note 2) Avalanche current Repetitive avalanche energy (Note 3) Channel temperature Storage temperature range JEDEC JEITA TOSHIBA ― SC-67 2-10U1B Weight : 1.
7 g (typ.
) Note: Using continuously under heavy loads (e.
g.
the application of high temperature/current/voltage and the significant change in temperature, etc.
) may cause this product to decrease in the reliability significantly even if the operating conditions (i.
e.
operating temperature/current/voltage, etc.
) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.
e.
reliability test report and estimated failure rate, etc).
Thermal Characteristics Characteristics Thermal resistance, channel to case Thermal resistance, channel to ambient Symbol Rth (ch-c) Rth (ch-a) Max 2.
78 62.
5 Unit °C/W °C/W 1 2 Note 1: Ensure that the channel temperature does not exceed 150℃.
Note 2: VDD = 90 V, Tch = 25°C, L = 5.
88 mH, IAR = 7.
5 A, RG = 25 Ω Note 3: Repetitive rating: pulse width limited by maximum channel temperature This transistor is an electrostatic-sensitive device.
Pl...


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