DatasheetsPDF.com

PJSD05W

Pan Jit International
Part Number PJSD05W
Manufacturer Pan Jit International
Description (PJSD03W - PJSD36W) SINGLE LINE TVS DIODE
Published Jul 1, 2008
Detailed Description PJSD03W~PJSD36W SINGLE LINE TVS DIODE FOR ESD PROTECTION PORTABLE ELECTRONICS VOLTAGE FEATURES • 350 Watts peak pules po...
Datasheet PDF File PJSD05W PDF File

PJSD05W
PJSD05W


Overview
PJSD03W~PJSD36W SINGLE LINE TVS DIODE FOR ESD PROTECTION PORTABLE ELECTRONICS VOLTAGE FEATURES • 350 Watts peak pules power( tp=8/20μs) • Small package for use in portable electronics • Suitable replacement for MLV’S in ESD protection applications • Low clamping voltage and leakage current • In compliance with EU RoHS 2002/95/EC directives 3~36 Volts POWER 350 Watts APPLICATIONS • Case: SOD-323 plastic • Terminals : Solderable per MIL-STD-750,Method 2026 • Polarity : Color band cathode • Apporx.
Weight: 0.
0001 ounce, 0.
0041 gram 1 2 Cathode Anode MAXIMUM RATINGS AND ELECTRICAL CHATACTERISTICS ABSOLUTE MAXIMUM RATING Rating Peak Pulse Power (tp=8/20 μs) ESD Voltage Operating Temperature Storage Temperature Symbol PPK VESD TJ TSTG Value 350 25 -50 to 150 -50 to 150 Units W KV O C C O www.
DataSheet4U.
com August 12.
2010-Rev.
00 PAGE .
1 PJSD03W~PJSD36W PJSD03W Marking 03W Parameter Reverse Stand-Off Voltage Reverse Breakdown Voltage Reverse Leakage Current Clamping Voltage(8/20 μs) Off State Junction Capacitance Off State Junction Capacitance PJSD05W Marking 05W Parameter Reverse Stand-Off Voltage Reverse Breakdown Voltage Reverse Leakage Current Clamping Voltage(8/20 μs) Off State Junction Capacitance Off State Junction Capacitance PJSD08W Marking 08W Parameter Reverse Stand-Off Voltage Reverse Breakdown Voltage Reverse Leakage Current Clamping Voltage(8/20 μs) Off State Junction Capacitance Off State Junction Capacitance PJSD12W Marking 12W Parameter Reverse Stand-Off Voltage Reverse Breakdown Voltage Reverse Leakage Current Clamping Voltage(8/20 μs) Off State Junction Capacitance Symbol VRWM VBR IR VC CJ CJ Conditions I BR=1mA VR=12V I PP=1A 0Vdc Bias=f=1MHz 5Vdc Bias=f=1MHz Min.
13.
3 Typical 130 50 Max.
12 15 1 19 Units V V μA V pF pF Symbol VRWM VBR IR VC CJ CJ Conditions I BR=1mA VR=3.
0V I PP=1A 0Vdc Bias=f=1MHz 5Vdc Bias=f=1MHz Min.
4 - Typical 450 150 Max.
3.
0 5.
0 125 6.
5 - Units V V μA V pF pF Symbol VRWM VBR IR VC CJ CJ Conditions I B...



Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)