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2N5296


Part Number 2N5296
Manufacturer Thomson
Title (2N5294 - 2N5298) Power Transistor
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2N5290 : 10 AMP NPN (continued) Sorted by IC, then VCEO Part Number mIaCx (A) mVCaExO (V) mhFiEn mhaFEx @Ic (A) 2N6562 2N6581 2N6590 10 450 10 40 5 10 450 7 35 Note 1 10 450 7 35 Note 1 10 AMP PNP Sorted by IC, then VCEO Part Number mIaCx (A) 2N4907 2N4908 2N5621 2N5737 2N5739 2N5875 2N6667 2N4909 2N5007 2N5009 2N5312 2N5316 2N5386 2N5623 2N5625 2N5853 2N5876 2N6127 2N6182 2N6183 2N6186 2N6187 2N6668 2N7369 SFT5151 SFT5153 SFT6650/3 2N5290 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 mVCaExO (V) mhFiEn mhaFEx @Ic (A) 40 20 80 Note 1 60 20 80 Note 1 60 70 200 5 60 20 80 5 60 20 80 5 60 20 100 Note 1 60 1000 2000 Note 1 80 20 80 Not.

2N5291 : 10 AMP PNP(continued) Sorted by IC, then VCEO Part Number mIaCx (A) mVCaExO (V) Ratings based on 25˚C case temperature unless otherwise specified mhFiEn mhaFEx @Ic (A) VmCEa(sxat) (V) @(A)IC mfTin (MHz) mPaTx *TC=100°C (W) Package 2N5291 10 100 70 200 5 0.9 5 40 116 TO-61/I 2N5314 10 100 30 90 10 1.5 10 30 50* TO-61/I 2N5318 10 100 30 90 5 0.6 5 30 50* TO-61/I 2N5627 10 100 30 90 5 0.9 5 30 116 TO-3 2N5677 10 100 30 90 5 0.6 5 20 50* TO-61 2N5738 10 100 20 80 5 0.5 5 10 50* TO-3 2N5740 10 100 20 80 5 0.5 5 10 20* TO-66 2N6184 10 100 30 120 Note 1 0.7 Note 1 Note 1 60 TO-59 2N6185 10 100 60 240 Note 1 0.7 Note 1 Note 1 60 T.

2N5293 : ·With TO-220 package ·High power dissipation APPLICATIONS ·Power amplifier and medium speed switching applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER 2N5293 VCBO Collector-base voltage 2N5295 2N5297 2N5293 VCEO Collector-emitter voltage 2N5295 2N5297 VEBO IC IB PT Tj Tstg Emitter-base voltage Collector current Base current Total power dissipation Junction temperature Storage temperature TC=25 Open collector Open base Open emitter CONDITIONS VALUE 80 60 80 70 40 60 7 4 2 36 150 -65~150 V A A W V V UNIT THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance from junction to case MAX 3..

2N5293 : File No. 322 OO(]5LJD Solid State Division Power Transistors 2N5293 2N5294 2N5295 2N5296 2N5297 2N5298 22NN55229953 2N5297 ~ For TO-66 Sockets JEOEC TO·220AA 22NN55229946 2N5298 ~ JEOEC TO·220AB lHIometaxial-Sase, Silicon N-P-N VERSAWATT Transistors General·Purpose Types for Medium-Power Switching and Amplifier Applications in Military, Industrial, and Commercial Equipment . FEATURES o Low saturation voltage- YeE(sat) = 1 Y max. at Ie = 0.5 A (21'15293, 21'15294) = 1 Y max. at Ie = 1 A (21'15295, 21'15296) = 1 Y max. at Ie =' 1.5 A (21'15297, 21'15298) 0YERSAWATT package (molded-silicone plastic) o Maximum safe-area-of-operation curves specified for DC and pulse service RCA-2N5293,.

2N5294 : The CENTRAL SEMICONDUCTOR 2N5294, 2N5296, and 2N5298 types are NPN silicon transistors manufactured by the epitaxial base process, and designed for applications that require power amplifier and medium speed switching capabilities. MARKING: FULL PART NUMBER TO-220 CASE MAXIMUM RATINGS: (TC=25°C) Collector-Base Voltage Collector-Emitter Voltage Collector-Emitter Voltage (RBE=100Ω) Collector-Emitter Voltage Continuous Collector Current Continuous Base Current Power Dissipation Operating and Storage Junction Temperature Thermal Resistance Thermal Resistance SYMBOL VCBO VCEV VCER VCEO IC IB PD TJ, Tstg ΘJA ΘJC 2N5294 80 80 75 70 2N5296 60 60 50 40 4.0 2.0 36 -65 to +150 70 3.47 2N5298 80 8.

2N5294 : Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company TO-220 Plastic Package 2N5294, 2N5296, 2N5298 2N5294, 5296, 5298 NPN PLASTIC POWER TRANSISTORS Medium Power Switching and Amplifier Applications N LH BF C E A OO 12 3 K D G J M ABSOLUTE MAXIMUM RATINGS Collector-base voltage (open emitter) Collector-emitter voltage (open base) Collector current Total power dissipation up to TC = 25°C Junction temperature Collector-emitter saturation voltage IC = 0.5 A; IB = 0.05 A IC = 1 A; IB = 0.1 A IC = 1.5 A; IB = 0.15 A D.C. current gain IC = 0.5 A; VCE = 4 V IC = 1 A; VCE = 4 V IC = 1.5 A; VCE = 4 V All diminsions in mm. PIN CONFIGURATION 1. BASE 2.

2N5294 : RECTRON SEMICONDUCTOR TECHNICAL SPECIFICATION See Below for Part # TO-220 - Power Transistors and Darlingtons TO-220 4 12 3 Pin Config 1. Base 2. Collector 3. Emitter 4. Collector Dimensions in millimeters Electrical Characteristics (Ta=25oC) Part # Polarity VCBO VCEO VEBO (V) (V) (V) Min Min Min PD (W) IC (A) ICES @ VCE hFE hFE @ IC (uA) (A) Max Min Max VCE (V) VCE (SAT) (V) Max VBE (SAT) @ (V) Max IC (A) fT @ IC (MHz) (mA) Min 2N5294 NPN 80 70 7 36 4 5004 50 30 120 0.5 4 1.0 0.5 0.8 200 2N5296 NPN 60 40 5 36 4 5004 50 30 120 1.0 4 1.0 1.0 0.8 200 2N5298 NPN 80 60 5 36 4 5004 50 20 80 1.5 4 1.0 1.5 0.8 200 2N6107 PNP 80 70 5 40 7 10001 60 30 150 2.3 2.0 4 7.0 4 3.

2N5294 : .

2N5294 : ·With TO-220 package ·High power dissipation APPLICATIONS ·Power amplifier and medium speed switching applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER 2N5294 VCBO Collector-base voltage 2N5296 2N5298 2N5294 VCEO Collector-emitter voltage 2N5296 2N5298 VEBO IC IB PT Tj Tstg Emitter-base voltage Collector current Base current Total power dissipation Junction temperature Storage temperature TC=25 Open collector Open base Open emitter CONDITIONS VALUE 80 60 80 70 40 60 7 4 2 36 150 -65~150 V A A W V V UNIT THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance from junction to case MAX 3..

2N5295 : ·With TO-220 package ·High power dissipation APPLICATIONS ·Power amplifier and medium speed switching applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER 2N5293 VCBO Collector-base voltage 2N5295 2N5297 2N5293 VCEO Collector-emitter voltage 2N5295 2N5297 VEBO IC IB PT Tj Tstg Emitter-base voltage Collector current Base current Total power dissipation Junction temperature Storage temperature TC=25 Open collector Open base Open emitter CONDITIONS VALUE 80 60 80 70 40 60 7 4 2 36 150 -65~150 V A A W V V UNIT THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance from junction to case MAX 3..

2N5295 : File No. 322 OO(]5LJD Solid State Division Power Transistors 2N5293 2N5294 2N5295 2N5296 2N5297 2N5298 22NN55229953 2N5297 ~ For TO-66 Sockets JEOEC TO·220AA 22NN55229946 2N5298 ~ JEOEC TO·220AB lHIometaxial-Sase, Silicon N-P-N VERSAWATT Transistors General·Purpose Types for Medium-Power Switching and Amplifier Applications in Military, Industrial, and Commercial Equipment . FEATURES o Low saturation voltage- YeE(sat) = 1 Y max. at Ie = 0.5 A (21'15293, 21'15294) = 1 Y max. at Ie = 1 A (21'15295, 21'15296) = 1 Y max. at Ie =' 1.5 A (21'15297, 21'15298) 0YERSAWATT package (molded-silicone plastic) o Maximum safe-area-of-operation curves specified for DC and pulse service RCA-2N5293,.

2N5296 : The CENTRAL SEMICONDUCTOR 2N5294, 2N5296, and 2N5298 types are NPN silicon transistors manufactured by the epitaxial base process, and designed for applications that require power amplifier and medium speed switching capabilities. MARKING: FULL PART NUMBER TO-220 CASE MAXIMUM RATINGS: (TC=25°C) Collector-Base Voltage Collector-Emitter Voltage Collector-Emitter Voltage (RBE=100Ω) Collector-Emitter Voltage Continuous Collector Current Continuous Base Current Power Dissipation Operating and Storage Junction Temperature Thermal Resistance Thermal Resistance SYMBOL VCBO VCEV VCER VCEO IC IB PD TJ, Tstg ΘJA ΘJC 2N5294 80 80 75 70 2N5296 60 60 50 40 4.0 2.0 36 -65 to +150 70 3.47 2N5298 80 8.

2N5296 : Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company TO-220 Plastic Package 2N5294, 2N5296, 2N5298 2N5294, 5296, 5298 NPN PLASTIC POWER TRANSISTORS Medium Power Switching and Amplifier Applications N LH BF C E A OO 12 3 K D G J M ABSOLUTE MAXIMUM RATINGS Collector-base voltage (open emitter) Collector-emitter voltage (open base) Collector current Total power dissipation up to TC = 25°C Junction temperature Collector-emitter saturation voltage IC = 0.5 A; IB = 0.05 A IC = 1 A; IB = 0.1 A IC = 1.5 A; IB = 0.15 A D.C. current gain IC = 0.5 A; VCE = 4 V IC = 1 A; VCE = 4 V IC = 1.5 A; VCE = 4 V All diminsions in mm. PIN CONFIGURATION 1. BASE 2.

2N5296 : RECTRON SEMICONDUCTOR TECHNICAL SPECIFICATION See Below for Part # TO-220 - Power Transistors and Darlingtons TO-220 4 12 3 Pin Config 1. Base 2. Collector 3. Emitter 4. Collector Dimensions in millimeters Electrical Characteristics (Ta=25oC) Part # Polarity VCBO VCEO VEBO (V) (V) (V) Min Min Min PD (W) IC (A) ICES @ VCE hFE hFE @ IC (uA) (A) Max Min Max VCE (V) VCE (SAT) (V) Max VBE (SAT) @ (V) Max IC (A) fT @ IC (MHz) (mA) Min 2N5294 NPN 80 70 7 36 4 5004 50 30 120 0.5 4 1.0 0.5 0.8 200 2N5296 NPN 60 40 5 36 4 5004 50 30 120 1.0 4 1.0 1.0 0.8 200 2N5298 NPN 80 60 5 36 4 5004 50 20 80 1.5 4 1.0 1.5 0.8 200 2N6107 PNP 80 70 5 40 7 10001 60 30 150 2.3 2.0 4 7.0 4 3.

2N5296 : .

2N5296 : ·With TO-220 package ·High power dissipation APPLICATIONS ·Power amplifier and medium speed switching applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER 2N5294 VCBO Collector-base voltage 2N5296 2N5298 2N5294 VCEO Collector-emitter voltage 2N5296 2N5298 VEBO IC IB PT Tj Tstg Emitter-base voltage Collector current Base current Total power dissipation Junction temperature Storage temperature TC=25 Open collector Open base Open emitter CONDITIONS VALUE 80 60 80 70 40 60 7 4 2 36 150 -65~150 V A A W V V UNIT THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance from junction to case MAX 3..




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