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K3017

Toshiba Semiconductor
Part Number K3017
Manufacturer Toshiba Semiconductor
Description 2SK3017
Published Jul 19, 2008
Detailed Description 2SK3017 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSIII) 2SK3017 DC−DC Converter, Relay Drive and ...
Datasheet PDF File K3017 PDF File

K3017
K3017

Overview
2SK3017 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSIII) 2SK3017 DC−DC Converter, Relay Drive and Motor Drive Applications z Low drain−source ON resistance z High forward transfer admittance z Low leakage current z Enhancement mode www.
DataSheet4U.
com : RDS (ON) = 1.
05 Ω (typ.
) : |Yfs| = 7.
0 S (typ.
) Unit: mm : IDSS = 100 μA (max) (VDS = 720 V) : Vth = 2.
0~4.
0 V (VDS = 10 V, ID = 1 mA) Absolute Maximum Ratings (Ta = 25°C) Characteristics Drain−source voltage Drain−gate voltage (RGS = 20 kΩ) Gate−source voltage Drain current DC (Note 1) Symbol VDSS VDGR VGSS ID IDP PD EAS IAR EAR Tch Tstg Rating 900 900 ±30 8.
5 25.
5 90 966 8.
5 9 150 −55~150 Unit V V V A A W mJ A mJ °C ...


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