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MMBD7000

Taiwan Semiconductor Company
Part Number MMBD7000
Manufacturer Taiwan Semiconductor Company
Description Dual Surface Mount Switching Diode
Published Sep 11, 2008
Detailed Description MMBD7000 Dual Surface Mount Switching Diode Voltage Range 75 Volts 350m Watts Power Dissipation Features Fast switching...
Datasheet PDF File MMBD7000 PDF File

MMBD7000
MMBD7000

Overview
MMBD7000 Dual Surface Mount Switching Diode Voltage Range 75 Volts 350m Watts Power Dissipation Features Fast switching speed Surface mount package ideally suited for automatic insertion For general purpose switching applications High conductance www.
DataSheet4U.
com 0.
020(0.
51) 0.
015(0.
37) SOT-23 0.
055(1.
40) 0.
047(1.
19) 0.
098(2.
50) 0.
083(2.
10) Mechanical Data Case: SOT-23, Molded plastic Terminals: Solderable per MIIL-STD-202, Method 208 Polarity: See diagram Marking: KJH Weight: 0.
008 gram (approx.
) 0.
080(2.
05) 0.
070(1.
78) 0.
024(0.
61) 0.
018(0.
45) 0.
120(3.
05) 0.
104(2.
65) 0.
041(1.
05) 0.
047(0.
89) 0.
043(1.
10) 0.
035(0.
89) 0.
007(0.
178) 0.
003(0.
076) 0.
006(0.
15) 0.
001(0.
013) 0.
024(0.
61) 0.
018(0.
45) Dimensions in inches and (millimeters) Maximum Ratings and Electrical Characteristics Rating at 25℃ambient temperature unless otherwise specified.
Maximum Ratings Type Number Symbol MMBD7000 Non-Repetitive Peak Reverse Voltage Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage RMS Reverse Voltage Forward Continuous Current (Note 1) Average Rectifier Output Current (Note 1) Non-Repetitive Peak Forward Surge Current @ t=1.
0uS @ t=1.
0S Power Dissipation (Note 1) Thermal Resistance Junction to Ambient Air (Note 1) Operating and Storage Temperature Range VRM VRRM VRWM VR VR(RMS) IFM Io IFSM Pd RθJA TJ, TSTG 100 75 53 300 150 2.
0 1.
0 350 357 -65 to + 150 Units V V V mA mA A mW K/W O C Electrical Characteristics Type Number Symbol Min Max 0.
70 0.
82 1.
10 1.
25 1.
0 3.
0 100 25 2.
0 4.
0 Units V V Reverse Breakdown Voltage (Note 3) IR=100uA V(BR) 75 Forward Voltage IF=1.
0mA 0.
55 IF= 10mA 0.
67 VF IF = 50mA 0.
75 IF=150mA Peak Reverse Current VR=50V VR=100V IR VR=50V, TJ=125℃ VR=20V Junction Capacitance VR=0, f=1.
0MHz Cj Reverse Recovery Time (Note 2) trr Notes: 1.
Valid Provided that Terminals are Kept at Ambient Temperature.
2.
Reverse Recovery Test Conditions: IF=IR=10mA, Irr=0.
1 x IR, RL=100Ω.
3.
Test Period < 3000uS.
uA nA pF nS - 846 - R...


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