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D2604

Toshiba Semiconductor
Part Number D2604
Manufacturer Toshiba Semiconductor
Description 2SD2604
Published Sep 17, 2008
Detailed Description 2SD2604 TOSHIBA Transistor Silicon NPN Triple Diffused Type (Darlington) 2SD2604 High-Power Switching Applications Hamm...
Datasheet PDF File D2604 PDF File

D2604
D2604

Overview
2SD2604 TOSHIBA Transistor Silicon NPN Triple Diffused Type (Darlington) 2SD2604 High-Power Switching Applications Hammer Drive, Pulse Motor Drive Applications Unit: mm • • High DC current gain: hFE = 2000 (min) Low saturation voltage: VCE (sat) = 1.
5 V (max) www.
DataSheet4U.
com Absolute Maximum Ratings (Tc = 25°C) Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range Ta = 25°C Tc = 25°C DC Pulse Symbol VCBO VCEO VEBO IC ICP IB PC Tj Tstg Rating 95 110 ± 15 5 5 10 0.
7 2.
0 20 150 −55 to 150 Unit V V V A A W °C °C JEDEC JEITA TOSHIBA ― SC-67 2-10R1A ...


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