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K3561

Toshiba Semiconductor
Part Number K3561
Manufacturer Toshiba Semiconductor
Description 2SK3561
Published Oct 13, 2008
Detailed Description 2SK3561 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSVI) 2SK3561 Switching Regulator Applications •...
Datasheet PDF File K3561 PDF File

K3561
K3561

Overview
2SK3561 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSVI) 2SK3561 Switching Regulator Applications • Low drain-source ON resistance: RDS (ON) = 0.
75 Ω (typ.
) • High forward transfer admittance: |Yfs| = 6.
5 S (typ.
) • Low leakage current: IDSS = 100 μA (VDS = 500 V) • Enhancement mode: Vth = 2.
0 to 4.
0 V (VDS = 10 V, ID = 1 mA) Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain-source voltage Drain-gate voltage (RGS = 20 kΩ) Gate-source voltage Drain current DC (Note 1) Pulse (t = 1 ms) (Note 1) Drain power dissipation (Tc = 25°C) Single pulse avalanche energy (Note 2) Avalanche current Repetitive avalanche energy (Note 3) ...


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