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SDT130

Sirectifier Semiconductors
Part Number SDT130
Manufacturer Sirectifier Semiconductors
Description Thyristor-Diode Modules
Published Nov 22, 2008
Detailed Description STD/SDT130 Thyristor-Diode Modules, Diode-Thyristor Modules Dimensions in mm (1mm=0.0394") Type VRSM VDSM V STD/SDT130GK...
Datasheet PDF File SDT130 PDF File

SDT130
SDT130

Overview
STD/SDT130 Thyristor-Diode Modules, Diode-Thyristor Modules Dimensions in mm (1mm=0.
0394") Type VRSM VDSM V STD/SDT130GK08 900 STD/SDT130GK12 1300 STD/SDT130GK14 1500 STD/SDT130GK16 1700 STD/SDT130GK18 1900 VRRM VDRM V 800 1200 1400 1600 1800 www.
DataSheet4U.
com Symbol ITRMS, IFRMS TVJ=TVJM ITAVM, IFAVM TC=85oC; 180o sine TVJ=45oC VR=0 TVJ=TVJM VR=0 TVJ=45oC VR=0 TVJ=TVJM VR=0 TVJ=TVJM f=50Hz, tp=200us VD=2/3VDRM IG=0.
5A diG/dt=0.
5A/us Test Conditions Maximum Ratings 300 130 Unit A ITSM, IFSM t=10ms (50Hz), sine t=8.
3ms (60Hz), sine t=10ms(50Hz), sine t=8.
3ms(60Hz), sine t=10ms (50Hz), sine t=8.
3ms (60Hz), sine t=10ms(50Hz), sine t=8.
3ms(60Hz), sine repetitive, IT=500A 5500 5850 4800 5100 151000 142000 115000 108000 150 A i dt 2 A2s (di/dt)cr A/us non repetitive, IT=500A 500 1000 120 60 8 10 -40.
.
.
+125 125 -40.
.
.
+125 V/us W W V o (dv/dt)cr PGM PGAV VRGM TVJ TVJM Tstg VISOL Md Weight TVJ=TVJM; VDR=2/3VDRM RGK= ; method 1 (linear voltage rise) TVJ=TVJM IT=ITAVM tp=30us tp=500us C 50/60Hz, RMS _ IISOL<1mA t=1min t=1s 3000 3600 2.
25-2.
75/20-25 4.
5-5.
5/40-48 125 V~ Nm/lb.
in.
g Mounting torque (M6) Terminal connection torque (M6) Typical including screws STD/SDT130 Thyristor-Diode Modules, Diode-Thyristor Modules Symbol Test Conditions Characteristic Values 10 1.
36 0.
8 1.
5 VD=6V; VD=6V; TVJ=TVJM; o Unit mA V V m V mA V mA mA mA us us uC A K/W K/W mm mm m/s2 IRRM, IDRM TVJ=TVJM; VR=VRRM; VD=VDRM VT, VF VTO rT www.
DataSheet4U.
com IT, IF=300A; TVJ=25 C For power-loss calculations only (TVJ=125oC) o o VGT IGT TVJ=25 C TVJ=-40oC TVJ=25oC TVJ=-40oC VD=2/3VDRM 2.
5 2.
6 150 200 0.
2 10 VGD IGD IL IH tgd tq QS IRM RthJC RthJK dS dA a TVJ=25 C; tp=30us; VD=6V IG=0.
5A; diG/dt=0.
5A/us TVJ=25oC; VD=6V; RGK= TVJ=25 C; VD=1/2VDRM IG=0.
5A; diG/dt=0.
5A/us TVJ=TVJM; IT=160A; tp=200us; -di/dt=10A/us VR=100V; dv/dt=20V/us; VD=2/3VDRM TVJ=TVJM; IT, IF=300A; -di/dt=50A/us typ.
o 300 200 2 150 550 235 per thyristor/diode; DC current per module per thyristor/diode...


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