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2SA757

Part Number	2SA757
Manufacturer	SavantIC
Description	Silicon POwer Transistors
Published	Feb 11, 2009
Detailed Description	SavantIC Semiconductor www.DataSheet4U.com Product Specification Silicon PNP Power Transistors 2SA757 DESCRIPTION ·W...
Datasheet	2SA757 PDF File

Overview

SavantIC Semiconductor www.
DataSheet4U.
com Product Specification Silicon PNP Power Transistors 2SA757 DESCRIPTION ·With TO-3 package ·Complement to type 2SC897 APPLICATIONS ·For audio amplifier power output applications PINNING(see Fig.
2) PIN 1 2 3 Base Emitter Collector Fig.
1 simplified outline (TO-3) and symbol DESCRIPTION Absolute maximum ratings(Ta= ) SYMBOL VCBO VCEO VEBO IC ICM PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Collector power dissipation Junction temperature Storage temperature TC=25 Open emitter Open base Open collector CONDITIONS VALUE -120 -100 -6 -7 -12 60 150 -55~150 UNIT V V V A A W SavantIC Semiconductor www.
DataSheet4U.
com Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER CONDITIONS MIN TYP.
2SA757 SYMBOL MAX UNIT V(BR)CEO V(BR)CBO V(BR)EBO VCEsat VBE ICBO hFE-1 hFE-2 fT Collector-emitter breakdown voltage IC=-50mA ;RBE=9 IC=-5mA ,IE=0 IE=-5mA ,IC=0 IC=-5A; IB=-1A IC=-1A ; VCE=-5V VCB=-30V; IE=0 IC=-1A ; VCE=-5V IC=-5A ; VCE=-5V IC=-1A ; VCE=-5V -100 V Collector-base breakdown voltage -120 V Emitter-base breakdown voltage -5 V Collector-emitter saturation voltage -1.
8 V Base-emitter on voltage -1.
5 V Collector cut-off current -1 mA DC current gain 25 200 DC current gain 20 Transition frequency 24 MHz hFE-1 Classifications A 25-60 B 50-120 C 100-200 2 SavantIC Semiconductor www.
DataSheet4U.
com Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2SA757 Fig.
2 outline dimensions (unindicated tolerance:±0.
1mm) 3 ...

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