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2SB861

SavantIC
Part Number 2SB861
Manufacturer SavantIC
Description SILICON POWER TRANSISTOR
Published Feb 16, 2009
Detailed Description SavantIC Semiconductor www.DataSheet4U.com Product Specification Silicon PNP Power Transistors 2SB861 DESCRIPTION ·W...
Datasheet PDF File 2SB861 PDF File

2SB861
2SB861

Overview
SavantIC Semiconductor www.
DataSheet4U.
com Product Specification Silicon PNP Power Transistors 2SB861 DESCRIPTION ·With TO-220C package ·Complement to type 2SD1138 APPLICATIONS ·Low frequency power amplifier color TV vertical deflection output PINNING PIN 1 2 3 DESCRIPTION Emitter Collector;connected to mounting base Base Absolute maximum ratings(Ta=25 ) SYMBOL VCBO VCEO VEBO IC ICP PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-Peak Ta=25 PC Collector power dissipation TC=25 Tj Tstg Junction temperature Storage temperature 30 150 -45~150 CONDITIONS Open emitter Open base Open collector VALUE -200 -150 -6 -2 -5 1.
8 W UNIT V V V A A SavantIC Semiconductor www.
DataSheet4U.
com Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collector-emitter breakdown voltage Emitter-base breakdown votage Collector-emitter saturation voltage Base-emitter voltage Collector cut-off current DC current gain DC current gain Output capacitance CONDITIONS IC=-50mA; RBE=: IE=-5mA; IC=0 IC=-0.
5 A;IB=-50m A IC=-50mA ; VCE=-4V VCB=-120V; IE=0 IC=-50mA ; VCE=-4V IC=-0.
5A ; VCE=-10V IE=0 ;VCB=-100V,f=1MHz 60 60 30 MIN -150 -6 TYP.
2SB861 SYMBOL V(BR)CEO V(BR)EBO VCEsat VBE ICBO hFE-1 hFE-2 COB MAX UNIT V V -3.
0 -1.
0 -1 200 V V µA pF hFE-1 classifications B 60-120 C 100-200 2 SavantIC Semiconductor www.
DataSheet4U.
com Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2SB861 Fig.
2 Outline dimensions (unindicated tolerance:±0.
10 mm) 3 SavantIC Semiconductor www.
DataSheet4U.
com Product Specification Silicon PNP Power Transistors 2SB861 4 ...


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