DatasheetsPDF.com

J340

Sanyo Semiconductor Corporation
Part Number J340
Manufacturer Sanyo Semiconductor Corporation
Description 2SJ340
Published Mar 14, 2009
Detailed Description Ordering number:ENN6420 P-Channel Silicon MOSFET www.DataSheet4U.com 2SJ340 Ultrahigh-Speed Switching Applications Fe...
Datasheet PDF File J340 PDF File

J340
J340


Overview
Ordering number:ENN6420 P-Channel Silicon MOSFET www.
DataSheet4U.
com 2SJ340 Ultrahigh-Speed Switching Applications Features · Low ON-resistance.
· Ultrahigh-speed switching.
· 4V drive.
· Enables simplified fabrication, high-density mounting, and miniaturization in end products due to the surface mountable package.
Package Dimensions unit:mm 2093A [2SJ340] 0.
9 10.
2 4.
5 1.
3 11.
5 1.
6 20.
9 1.
2 11.
0 9.
4 0.
8 8.
8 0.
4 1 2 3 2.
7 2.
55 2.
55 1 : Gate 2 : Drain 3 : Source SANYO : SMP unit:mm 2090A [2SJ340] 0.
8 10.
2 4.
5 1.
3 1.
5max 8.
8 9.
9 3.
0 2.
55 1.
2 2.
55 2.
7 1.
35 1 0.
8 2 3 0 to 0.
3 0.
4 2.
55 2.
55 1 : Gate 2 : Drain 3 : Source SANYO : SMP-FD Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft’s control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage.
Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other parameters) listed in products specifications of any and all SANYO products described or contained herein.
SANYO Electric Co.
,Ltd.
Semiconductor Company TOKYO OFFICE Tokyo Bldg.
, 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 80700TS (KOTO) TA-2165 No.
6420–1/4 1.
4 2SJ340 Specifications www.
DataSheet4U.
com Absolute Maximum Ratings at Ta = 25˚C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW≤10µs, duty cycle≤1% Tc=25˚C Conditions Ratings –60 ±20 –30 –120 1.
65 70 150 –55 to +150 ...



Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)