DatasheetsPDF.com

D2353

Part Number	D2353
Manufacturer	Toshiba Semiconductor
Description	2SD2353
Published	Apr 30, 2009
Detailed Description	2SD2353 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SD2353 Power Amplifier Applications www.datasheet4u.com U...
Datasheet	D2353 PDF File

Overview

2SD2353 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SD2353 Power Amplifier Applications www.
datasheet4u.
com Unit: mm • • High DC current gain: hFE = 800 to 3200 Low collector saturation voltage: VCE (sat) = 0.
4 V (typ.
) Absolute Maximum Ratings (Tc = 25°C) Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range Ta = 25°C Tc = 25°C DC Pulse Symbol VCBO VCEO VEBO IC ICP IB PC Tj Tstg Rating 60 60 7 3 6 0.
6 2 25 150 −55 to 150 Unit V V V A A W °C °C JEDEC JEITA ― SC-67 TOSHIBA 2-10R1A Note: Using continuously under heavy loads (e.
g.
the applica...

Similar Datasheet

D2300 1.3 mm D2300-Type Laser Isolated DFB Laser Module - Agere Systems
D2300 1.3 m D2300-Type Laser Isolated DFB Laser Module - Micro Electronics
D2304G 1.3 mm D2300-Type Laser Isolated DFB Laser Module - Agere Systems
D2304G 1.3 m D2300-Type Laser Isolated DFB Laser Module - Micro Electronics
D2312 1A Step-Down DC-DC Converter - ETC
D2318 2SD2318 - Rohm
D2331 2SD2331 - SavantIC
D2333 2SD2333 - SavantIC
D2335 2SD2335 - SavantIC
D234 2SD234 - SavantIC

Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)