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2SD1409

SavantIC
Part Number 2SD1409
Manufacturer SavantIC
Description SILICON POWER TRANSISTOR
Published May 4, 2009
Detailed Description SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SD1409 www.datasheet4u.com DESCRIPTION ...
Datasheet PDF File 2SD1409 PDF File

2SD1409
2SD1409

Overview
SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SD1409 www.
datasheet4u.
com DESCRIPTION ·With TO-220Fa package ·High DC current gain ·DARLINGTON APPLICATIONS ·Igniter applications ·High volitage switching applications PINNING PIN 1 2 3 Base Collector Emitter DESCRIPTION Absolute maximum ratings(Ta=25 ) SYMBOL VCBO VCEO VEBO IC IB PARAMETER Collector-base voltage Collector -emitter voltage Emitter-base voltage Collector current Base current TC=25 PC Collector power dissipation Ta=25 Tj Tstg Junction temperature Storage temperature 2.
0 150 -55~150 CONDITIONS Open emitter Open base Open collector VALUE 600 400 5 6 1 25 W UNIT V V V A A 1 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SD1409 CHARACTERISTICS www.
datasheet4u.
com Tj=25 unless otherwise specified PARAMETER Collector-emitter breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Emitter-collector diode forward voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Collector output capacitance CONDITIONS IC=10mA; IB=0 IC=4A ;IB=0.
04A IC=4A ;IB=0.
04A IE=4A; IB=0 VCB=600V; IE=0 VEB=5V; IC=0 IC=2A ; VCE=2V IC=4A ; VCE=2V f=1MHz ; VCB=50V;IE=0 600 100 35 pF MIN 400 2.
0 2.
5 3.
0 0.
5 3 TYP.
MAX UNIT V V V V mA mA SYMBOL V(BR)CEO VCEsat VBEsat VECF ICBO IEBO hFE-1 hFE-2 COB Switching times ton tstg tf Turn-on time Storage time Fall time IB1=-IB2=0.
04A VCC=100V ,RL=25@ 1 8 5 µs µs µs 2 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE www.
datasheet4u.
com 2SD1409 Fig.
2 outline dimensions (unindicated tolerance:±0.
15 mm) 3 ...


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