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1SS404

Part Number	1SS404
Manufacturer	Toshiba Semiconductor
Description	Silicon Epitaxial Schottky Barrier Type
Published	May 5, 2009
Detailed Description	1SS404 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS404 High Speed Switching Applications www.datasheet4u.c...
Datasheet	1SS404 PDF File

Overview

1SS404 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS404 High Speed Switching Applications www.
datasheet4u.
com Unit: mm • • • • Two-pin small packages are suitable for higher mounting densities Low forward voltage : VF (3) = 0.
38 V (typ.
) Low reverse current: IR = 50 μA (max) Small total capacitance: CT = 46 pF (typ.
) Absolute Maximum Ratings (Ta = 25°C) Characteristics Maximum (peak) reverse voltage Reverse voltage Maximum (peak) forward current Average forward current Power dissipation Junction temperature Storage temperature range Operating temperature range Symbol VRM VR IFM IO P Tj Tstg Topr Rating 25 20 700 300 200 (Note 1) 125 −55 ~ 125 −40 ~ 100 Unit V V mA mA mW °C °...

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