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MS1077

Microsemi Corporation
Part Number MS1077
Manufacturer Microsemi Corporation
Description RF & MICROWAVE TRANSISTORS
Published May 7, 2009
Detailed Description MS1077 RF PRODUCTS DIVISION RF & MICROWAVE TRANSISTORS P RODUCT P REVIEW DESCRIPTION www.datasheet4u.com KEY FEATURES...
Datasheet PDF File MS1077 PDF File

MS1077
MS1077

Overview
MS1077 RF PRODUCTS DIVISION RF & MICROWAVE TRANSISTORS P RODUCT P REVIEW DESCRIPTION www.
datasheet4u.
com KEY FEATURES W W W .
Microsemi .
COM The MS1077 is a Class AB epitaxial silicon NPN planar transistor designed primarily for SSB communications.
This device utilizes emitter ballasting to achieve extreme ruggedness under severe operating conditions.
IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.
microsemi.
com Optimized for SSB !" 30 MHz !" 28 Volts !" IMD –30dB !" Common Emitter !" Gold Metallization !" POUT = 130 W PEP !" GP = 12 dB Gain !" APPLICATIONS/BENEFITS APPLICATIONS/BENEFITS HF SSB Applications !" ABSOLUTE MAXIMUM RATINGS (TCASE = 25°C) Symbol VCBO VCEO VEBO IC PDISS TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Device Current Power Dissipation Junction Temperature Storage Temperature Value 70 35 4.
0 12 175 +200 -65 to +150 Unit V V V A W °C °C THERMAL DATA RTH(j-c) Junction-Case Thermal Resistance 1.
0 °C/W MS1077 Copyright  2000 MSC1610.
PDF 2000-11-06 Microsemi RF Products Division 140 Commerce Drive, Montgomeryville PA 18936, (215) 631-9840, Fax: (215) 631-9855 Page 1 MS1077 RF PRODUCTS DIVISION RF & MICROWAVE TRANSISTORS P RODUCT P REVIEW W W W .
Microsemi .
COM www.
datasheet4u.
com STATIC ELECTRICAL SPECIFICATIONS (TCASE = 25°C Symbol BVCES BVCEO BVEBO ICES hFE IC = 50 mA IC = 100 mA IE = 20 mA VCE =35 V VCE = 5 V Test Conditions VBE = 0 V IB = 0 mA IC = 0 mA IE = 0 mA IC = 7 A Min.
70 35 4.
0 18 MS1077 Typ.
Max.
Units V V V mA 20 50 DYMANIC ELECTRICAL SPECIFICATIONS (TCASE = 25°C Symbol Test Conditions VCE = 28 V VCE = 28 V VCE = 28 V VCE = 28 V VCB = 28 V ICQ = 150 mA ICQ = 150 mA ICQ = 150 mA ICQ = 150 mA f = 30 MHz POUT POUT = 130 W PEP GP IMD * POUT = 130 W PEP POUT = 130 W PEP ηC f = 1 MHz COB Note: * f1 = 30.
00 MHz, f2 = 30.
01 MHz Min.
130 12 37 MS1077 Typ.
Max.
Units W dB dBc % pF -30 220 260 ELECTRICALS Copyright  2000 MSC16...


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