DatasheetsPDF.com

BD651

SavantIC
Part Number BD651
Manufacturer SavantIC
Description SILICON POWER TRANSISTOR
Published May 9, 2009
Detailed Description SavantIC Semiconductor Product Specification Silicon NPN Power Transistors DESCRIPTION ·With TO-220C package www.datas...
Datasheet PDF File BD651 PDF File

BD651
BD651


Overview
SavantIC Semiconductor Product Specification Silicon NPN Power Transistors DESCRIPTION ·With TO-220C package www.
datasheet4u.
com ·Complement to type BD646/648/650/652 ·DARLINGTON APPLICATIONS ·For use in output stages in audio equipment ,general amplifier,and analogue switching applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION BD645/647/649/651 Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER BD645 VCBO Collector-base voltage BD647 BD649 BD651 BD645 VCEO Collector-emitter voltage BD647 BD649 BD651 VEBO IC ICM IB PC Tj Tstg Emitter-base voltage Collector current-DC Collector current-Pulse Base current Collector power dissipation Junction temperature Storage temperature TC=25 Open collector Open base Open emitter CONDITIONS VALUE 80 100 120 140 60 80 100 120 5 8 12 0.
3 62.
5 150 -65~150 V A A mA W V V UNIT SavantIC Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER BD645 Collector-emitter breakdown voltage BD647 IC=30mA, IB=0 BD649 BD651 VCEsat-1 VCEsat-2 VBEsat VBE Collector-emitter saturation voltage Collector-emitter saturation voltage Base-emitter saturation voltage Base-emitter on voltage BD645 BD647 ICBO Collector cut-off current BD649 BD651 BD645 BD647 ICEO Collector cut-off current BD649 BD651 IEBO hFE Emitter cut-off current DC current gain VCE=50V, IB=0 VCE=60V, IB=0 VEB=5V; IC=0 IC=3A ; VCE=3V IC=3A ,IB=12mA IC=5A ,IB=50mA IC=5A ,IB=50mA IC=3A ; VCE=3V VCB=60V, IE=0 VCB=40V, IE=0 ;TC=150 VCB=80V, IE=0 VCB=50V, IE=0 ;TC=150 VCB=100V, IE=0 VCB=60V, IE=0 ;TC=150 VCB=120V, IE=0 VCB=70V, IE=0 ;TC=150 VCE=30V, IB=0 VCE=40V, IB=0 CONDITIONS www.
datasheet4u.
com BD645/647/649/651 SYMBOL MIN 60 80 TYP.
MAX UNIT V(BR)CEO V 100 120 2.
0 2.
5 3.
0 2.
5 0.
2 2.
0 0.
2 2.
0 0.
2 2.
0 0.
2 2.
0 mA V V V V 0.
5 mA 5 750 mA THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance junction to case MAX 2.
0 UNIT /W 2 SavantIC Semiconductor Pr...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)