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BDT81

Part Number	BDT81
Manufacturer	Inchange Semiconductor
Description	Silicon NPN Power Transistor
Published	May 10, 2009
Detailed Description	isc Silicon NPN Power Transistors BDT81/83/85/87 DESCRIPTION ·DC Current Gain -hFE = 40(Min)@ IC= 5A ·Collector-Emitte...
Datasheet	BDT81 PDF File

Overview

isc Silicon NPN Power Transistors BDT81/83/85/87 DESCRIPTION ·DC Current Gain -hFE = 40(Min)@ IC= 5A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 60V(Min)- BDT81; 80V(Min)- BDT83; 100V(Min)- BDT85; 120V(Min)- BDT87 ·Complement to Type BDT82/84/86/88 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in audio output stages and general amplifer and switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT BDT81 60 BDT83 80 VCBO Collector-Base Voltage V BDT85 100 BDT87 120 BDT81 60 VCEO Collector-Emitter Voltage BDT83 80 V BDT85 100 BDT87 120 VEBO Emitter-Base Voltag...

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