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MJ16012

SavantIC
Part Number MJ16012
Manufacturer SavantIC
Description SILICON POWER TRANSISTOR
Published May 24, 2009
Detailed Description SavantIC Semiconductor Product Specification Silicon NPN Power Transistors DESCRIPTION ·With TO-3 package www.datashee...
Datasheet PDF File MJ16012 PDF File

MJ16012
MJ16012

Overview
SavantIC Semiconductor Product Specification Silicon NPN Power Transistors DESCRIPTION ·With TO-3 package www.
datasheet4u.
com ·High voltage ,high speed APPLICATIONS ·Switching Regulators ·Inverters ·Solenoids ·Relay Drivers ·Motor Controls ·Deflection Circuits PINNING (see Fig.
2) PIN 1 2 3 Base Emitter Collector DESCRIPTION MJ16012 Fig.
1 simplified outline (TO-3) and symbol ABSOLUTE MAXIMUM RATINGS(TC=25 ) SYMBOL VCBO VCEO VEBO IC ICM IB IBM PD Ti Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Base current Base current-peak Total Power Dissipation Derate above 25 Junction temperature Storage temperature TC=25 CONDITIONS Open emitter Open base Open collector VALUE 850 450 6 15 20 10 15 175 1.
0 150 -65~200 UNIT V V V A A A A W W/ THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance junction to case VALUE 1.
0 UNIT /W SavantIC Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collector-emitter sustaining voltage Collector-emitter saturation voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Collector cut-off current Emitter cut-off current DC current gain Output capacitance CONDITIONS IC=0.
1A ;IB=0 IC=5A; IB=0.
5A IC=10A ;IB=1.
0A TC=100 IC=10A ;IB=1.
0A TC=100 VCE=850V;RBE=50>;TC=100 VCE=850V; VBE(off)=1.
5V TC=100 VEB=6V; IC=0 IC=15A ; VCE=5V VCB=10V,IE=0;f=1.
0KHz 7 MIN 450 www.
datasheet4u.
com MJ16012 SYMBOL VCEO(SUS) VCE(sat)-1 VCE(sat)-2 VBE(sat) ICER ICEV IEBO hFE COB TYP.
MAX UNIT V 2.
5 3.
0 3.
0 1.
5 1.
5 2.
5 0.
25 1.
5 10 V V V mA mA mA 400 pF Switching times resistive load td tr ts tf Delay time Rise time Storage time Fall time IC=10A ; VCC=250V IB1=1.
0A ;IB2=2.
0A PW=30µs; RB2=1.
6> Duty CycleD2.
0% 20 200 900 150 ns ns ns ns 2 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE www.
datasheet4u.
...


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