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2SD1440

Inchange Semiconductor
Part Number 2SD1440
Manufacturer Inchange Semiconductor
Description Power Transistor
Published Sep 22, 2009
Detailed Description isc Silicon NPN Power Transistor 2SD1440 DESCRIPTION ·High Breakdown Voltage- : VCBO= 1500V (Min) ·High Switching Spee...
Datasheet PDF File 2SD1440 PDF File

2SD1440
2SD1440

Overview
isc Silicon NPN Power Transistor 2SD1440 DESCRIPTION ·High Breakdown Voltage- : VCBO= 1500V (Min) ·High Switching Speed ·Built-in Damper Diode ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for horizontal deflection output applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1500 V VCES Collector-Emitter Voltage 1500 V VEBO Emitter-Base Voltage 5 V IC Collector Current- Continuous 3.
5 A ICP Collector Current-Peak 13 A IBP Base Current-Peak Collector Power Dissipation @ Ta= 25℃ PC Collector Power Dissipation @ TC= 25℃ TJ Junction Temperature 3.
5 A 2.
5 W 65 130 ℃ Tstg Storage Temperature Range -55~130 ℃ isc website：www.
iscsemi.
com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor 2SD1440 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP.
MAX UNIT V(BR)EBO Emitt...


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