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2SD1476

Part Number	2SD1476
Manufacturer	Inchange Semiconductor
Description	Power Transistor
Published	Sep 22, 2009
Detailed Description	isc Silicon NPN Power Transistor 2SD1476 DESCRIPTION ·Low Collector Saturation Voltage : VCE(sat)= 1.0V(Max)@ IC= 2A ·...
Datasheet	2SD1476 PDF File

Overview

isc Silicon NPN Power Transistor 2SD1476 DESCRIPTION ·Low Collector Saturation Voltage : VCE(sat)= 1.
0V(Max)@ IC= 2A ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V (Min) ·Good Linearity of hFE ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for power switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 80 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 4 A IB Base Current-Peak Collector Power Dissipation @ TC=25℃ PC Collector Power Dissipation @ Ta=25℃ TJ Junction Temperature 1 A 30 W 1...

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