DatasheetsPDF.com

2SD1531

Part Number	2SD1531
Manufacturer	Inchange Semiconductor
Description	Power Transistor
Published	Sep 22, 2009
Detailed Description	isc Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 40V(Min) ·Good Linearity...
Datasheet	2SD1531 PDF File

Overview

isc Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 40V(Min) ·Good Linearity of hFE ·Low Collector Saturation Voltage ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for AF output amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 50 V VCEO Collector-Emitter Voltage 40 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 2 A ICP Collector Current-Peak Collector Power Dissipation @ TC=25℃ PC Collector Power Dissipation @ Ta=25℃ TJ Junction Temperature 4 A 5 W 1.
2 150 ℃ Tstg Storage Tempe...

Similar Datasheet

2SD1500 Power Transistor - Inchange Semiconductor
2SD1503 NPN Transistor - INCHANGE
2SD1504 Silicon NPN Transistor - Hitachi Semiconductor
2SD1505 SILICON POWER TRANSISTOR - SavantIC
2SD1505 NPN Transistor - INCHANGE
2SD1506 NPN Transistor - INCHANGE
2SD1506 SILICON POWER TRANSISTOR - SavantIC
2SD1507M NPN Silicon Transistor - Rohm
2SD1508 Silicon NPN Transistor - Toshiba Semiconductor
2SD1509 Silicon NPN Transistor - Toshiba Semiconductor

Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)