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2SD1928

Part Number	2SD1928
Manufacturer	Inchange Semiconductor
Description	Power Transistor
Published	Sep 22, 2009
Detailed Description	isc Silicon NPN Darlington Power Transistor 2SD1928 DESCRIPTION ·Collector-Emitter Saturation Voltage- : VCE(sat)= 1.5...
Datasheet	2SD1928 PDF File

Overview

isc Silicon NPN Darlington Power Transistor 2SD1928 DESCRIPTION ·Collector-Emitter Saturation Voltage- : VCE(sat)= 1.
5V(Max) @IC= 4A ·High DC Current Gain : hFE= 2000(Min) @ IC= 4A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for audio frequency power amplifier and low speed switching industrial use.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 100 V VCEO Collector-Emitter Voltage 100 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 5 A ICP Collector Current-Pulse 12 A IB Base Current-Continuous Collector Power Dissipation @ Ta=25℃ PC Collect...

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