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TC2591

Part Number	TC2591
Manufacturer	Transcom
Description	1 W Flange Ceramic Packaged PHEMT GaAs Power FETs
Published	Oct 23, 2009
Detailed Description	TC2591 REV4_20070507 1 W Flange Ceramic Packaged PHEMT GaAs Power FETs FEATURES • • • • • • • • • • 1 W Typical Output...
Datasheet	TC2591 PDF File

Overview

TC2591 REV4_20070507 1 W Flange Ceramic Packaged PHEMT GaAs Power FETs FEATURES • • • • • • • • • • 1 W Typical Output Power at 6 GHz 12 dB Typical Linear Power Gain at 6 GHz High Linearity: IP3 = 40 dBm Typical at 6 GHz High Power Added Efficiency: Nominal PAE of 43 % at 6 GHz Suitable for High Reliability Application Breakdown Voltage: BVDGO ≥ 15 V Lg = 0.
35 µm, Wg = 2.
4 mm Tight Vp ranges control High RF input power handling capability 100 % DC Tested Flange Ceramic Package PHOTO ENLARGEMENT • DESCRIPTION The TC2591 is packaged with the TC1501 Pseudomorphic High Electron Mobility Transistor (PHEMT) chip.
The flange ceramic package provides the best thermal conductivity for the GaAs F...

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