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2SD1590

Part Number	2SD1590
Manufacturer	Inchange Semiconductor Company
Description	Silicon NPN Darlington Power Transistor
Published	Oct 31, 2009
Detailed Description	isc Silicon NPN Darlington Power Transistor 2SD1590 DESCRIPTION ·Collector-Emitter Saturation Voltage- : VCE(sat)= 1.5...
Datasheet	2SD1590 PDF File

Overview

isc Silicon NPN Darlington Power Transistor 2SD1590 DESCRIPTION ·Collector-Emitter Saturation Voltage- : VCE(sat)= 1.
5V(Max) @IC= 3A ·High DC Current Gain : hFE= 2000(Min) @ IC= 3A ·Complement to Type 2SB1099 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for audio frequency power amplifier and low speed switching industrial use.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 150 V VCEO Collector-Emitter Voltage 100 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 8 A ICP Collector Current-Pulse 12 A IB Base Current-Continuous Collector Power Diss...

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