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A1962

Fairchild Semiconductor
Part Number A1962
Manufacturer Fairchild Semiconductor
Description 2SA1962
Published Dec 2, 2009
Detailed Description 2SA1962/FJA4213 — PNP Epitaxial Silicon Transistor March 2008 2SA1962/FJA4213 PNP Epitaxial Silicon Transistor Applica...
Datasheet PDF File A1962 PDF File

A1962
A1962


Overview
2SA1962/FJA4213 — PNP Epitaxial Silicon Transistor March 2008 2SA1962/FJA4213 PNP Epitaxial Silicon Transistor Applications • High-Fidelity Audio Output Amplifier • General Purpose Power Amplifier Features • • • • • • • • • High Current Capability: IC = -15A High Power Dissipation : 130watts High Frequency : 30MHz.
High Voltage : VCEO= -230V Wide S.
O.
A for reliable operation.
Excellent Gain Linearity for low THD.
Complement to 2SC5242/FJA4313.
Thermal and electrical Spice models are available.
Same transistor is also available in: -- TO264 package, 2SA1943/FJL4215 : 150 watts -- TO220 package, FJP1943 : 80 watts -- TO220F package, FJPF1943 : 50 watts 1 TO-3P 1.
Base 2.
Collector 3.
Emitter Absolute Maximum Ratings* Symbol BVCBO BVCEO BVEBO IC www.
DataSheet4U.
com IB PD TJ, TSTG Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Ta = 25°C unless otherwise noted Parameter Ratings -230 -230 -5 -15 -1.
5 130 1.
04 - 50 ~ +150 Units V V V A A W W/°C °C Total Device Dissipation(TC=25°C) Derate above 25°C Junction and Storage Temperature * These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
Thermal Characteristics* Symbol RθJC * Device mounted on minimum pad size Ta=25°C unless otherwise noted Parameter Thermal Resistance, Junction to Case Max.
0.
96 Units °C/W hFE Classification Classification hFE1 R 55 ~ 110 O 80 ~ 160 © 2008 Fairchild Semiconductor Corporation 2SA1962/FJA4213 Rev.
A2 1 www.
fairchildsemi.
com 2SA1962/FJA4213 — PNP Epitaxial Silicon Transistor Electrical Characteristics* T =25°C unless otherwise noted a Symbol BVCBO BVCEO BVEBO ICBO IEBO hFE1 hFE2 VCE(sat) VBE(on) fT Cob Parameter Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current Emitter Cut-off Current DC Current Gain DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter On Voltage Current Gain...


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