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1N3290

NAINA SEMICONDUCTOR
Part Number 1N3290
Manufacturer NAINA SEMICONDUCTOR
Description (1N3288 - 1N3297) SILICON POWER DIODE
Published Jan 14, 2010
Detailed Description 1N3288-1N3297 SILICON POWER DIODE DO - 8 FEATURES • Diffused Series • Available in Normal & Reverse Polarity • Industria...
Datasheet PDF File 1N3290 PDF File

1N3290
1N3290

Overview
1N3288-1N3297 SILICON POWER DIODE DO - 8 FEATURES • Diffused Series • Available in Normal & Reverse Polarity • Industrial Grade • Available In Avalanche Characteristic ELECTRICAL SPECIFICATIONS IF V FM IFSM IFRM I2t Maximum Average Forward Current Te=1250C Maximum peak forward voltage drop @ Rated IF(AV) Maximum peak one cycle (non-rep) surge current 10 m sec Maximum peak repetitive surge current Maximum I2t rating (non-rep.
) for 5 to 10 msec.
100A 1.
5V 2200A 500 A 24000 A2 Sec NAINA THERMAL MECHANICAL SPECIFICATIONS θ JC Tj Tstg W www.
DataSheet4U.
com Maximum thermal resistance Junction to case Operating Junction Temp.
Storage temperature Mounting torque (Non-lubricated threads) Approx, weight 0.
400C/W -650C to 1500C -65 0C to 2000C 2.
0 M-kg min, 3.
0 M-kg max 150 gms.
ELECTRICAL RATINGS TYPE VRRM Max.
repetitive peak reverse voltage (v) VR(RMS) VR Max.
R.
M.
S.
reverse voltage(V) Max.
D.
C.
Blocking Voltage (V) 1N32881N3289 1N32901N3291 1N3292 1N3293 1N32941N3295IN3296 100 70 100 ...


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