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1N3297

NAINA SEMICONDUCTOR
Part Number 1N3297
Manufacturer NAINA SEMICONDUCTOR
Description (1N3288 - 1N3297) SILICON POWER DIODE
Published Jan 14, 2010
Detailed Description 1N3288-1N3297 SILICON POWER DIODE DO - 8 FEATURES • Diffused Series • Available in Normal & Reverse Polarity • Industria...
Datasheet PDF File 1N3297 PDF File

1N3297
1N3297


Overview
1N3288-1N3297 SILICON POWER DIODE DO - 8 FEATURES • Diffused Series • Available in Normal & Reverse Polarity • Industrial Grade • Available In Avalanche Characteristic ELECTRICAL SPECIFICATIONS IF V FM IFSM IFRM I2t Maximum Average Forward Current Te=1250C Maximum peak forward voltage drop @ Rated IF(AV) Maximum peak one cycle (non-rep) surge current 10 m sec Maximum peak repetitive surge current Maximum I2t rating (non-rep.
) for 5 to 10 msec.
100A 1.
5V 2200A 500 A 24000 A2 Sec NAINA THERMAL MECHANICAL SPECIFICATIONS θ JC Tj Tstg W www.
DataSheet4U.
com Maximum thermal resistance Junction to case Operating Junction Temp.
Storage temperature Mounting torque (Non-lubricated threads) Approx,...



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