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BFR90

Advanced Power Technology

RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS

140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: (215) 631-9840 FAX: (215) 631-9855 BFR90 BRF90G *G Denotes RoH...


BFR90

Advanced Power Technology


Octopart Stock #: O-660913

Findchips Stock #: 660913-F

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140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: (215) 631-9840 FAX: (215) 631-9855 BFR90 BRF90G *G Denotes RoHS Compliant, Pb Free Terminal Finish RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • • • High Current-Gain – Bandwidth Product, fT = 5.0 GHz (typ) @ IC = 14 mA Low Noise Figure – NF = 2.4 dB (typ) @ f = 0.5 GHz High P
More View ower Gain – Gmax = 18dB (typ) @ f = 0.5 GHz Macro T (STYLE #2) DESCRIPTION: Designed primarily for use in high-gain, low noise, small-signal amplifiers. Also used in applications requiring fast switching times. ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C) www.DataSheet4U.com Symbol VCEO VCBO VEBO IC Parameter Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Value 15 20 3.0 30 Unit Vdc Vdc Vdc mA Thermal Data P D Total Device Dissipation @ TA = 60ºC Derate above 60ºC 180 2.0 mWatts mW/ ºC Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct. Rev A 9/2005 BFR90 BRF90G ELECTRICAL SPECIFICATIONS (Tcase = 25°C) STATIC (off) Symbol BVCEO BVCB0 BVEBO ICBO Test Conditions Min. Collector-Emitter Breakdown Voltage (IC = 1.0 mAdc, IB = 0) Collector-Base Breakdown Voltage (IC = 0.1 mAdc, IE = 0) Emitter-Base Breakdown Voltage (IE = 0.1 mAdc, IC = 0) Collector Cutoff Current (VCB = 10 Vdc, VBE = 0 Vdc) 15 20 3.0 Value Typ. Max. 50 Unit Vdc Vdc Vdc nA (on) HFE DC Current Gain (IC = 14 mAdc, VCE = 10 Vdc) 25 250 - DYNAMIC www.DataSheet4U.com Symbol Test Conditions Min. Value Typ. 5.0 0.5 Max. 1.0 Unit GHz pF Ftau CCB Current-Gain – Bandwidth Product (IC = 14 mA, VCE = 10 Vdc, f = 0.5 GHz) Output Capacitance (VCB = 10 Vdc, IE = 0, f = 1.0 MHz) - Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct. Rev A 9/2005 BFR90 BRF90G FUNCTIONAL Symbol Test Conditions Min. NF Noise Figure (IC = 2.0 mAdc, VCE = 10 Vdc, f = 0.5 GHz) (IC = 2.0 mAdc, VCE = 10 Vdc, f = 1.0 GHz) Power Gain at Optimum Noise Figure (IC = 2.0 mAdc, VCE = 10 Vdc, f = 0.5 GHz) (IC = 2.0 mAdc, VCE = 10 Vdc, f = 1.0 GHz) Insertion Gain (IC = 14 mAdc, VCE = 10 Vdc, f = 0.5 GHz) (IC = 14 mAdc, VCE = 10 Vdc, f = 1.0 GHz) Maximum Stable Gain (IC = 14 mAdc, VCE = 10 Vdc, f = 0.5 GHz) (IC = 14 mAdc, VCE = 10 Vdc, f = 1.0 GHz) Maximum Unilateral Gain (1) (IC = 14 mAdc, VCE = 10 Vdc, f = 0.5 GHz) (IC = 14 mAdc, VCE = 10 Vdc, f = 1.0 GHz) Value Typ. 2.4 3.0 Max. Unit dB GNF |S21| 2 15 15 10 16 11 20 15 18 12.5 - dB dB MSG - - dB G U max - - dB Table 1. Common Emitter S-Parameters, @ VCE = 10 V, IC = 14 mA f S11 0.382 0.282 0.217 0.162 0.140 0.135 0.124 (MHz) |S11| ww






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