DatasheetsPDF.com

TSM4431

Taiwan Semiconductor Company
Part Number TSM4431
Manufacturer Taiwan Semiconductor Company
Description 30V P-Channel MOSFET
Published Mar 5, 2010
Detailed Description www.DataSheet4U.com TSM4431 30V P-Channel MOSFET PRODUCT SUMMARY VDS (V) RDS(on)(mΩ) -30 40 @ VGS = -10V 70 @ VGS = -4...
Datasheet PDF File TSM4431 PDF File

TSM4431
TSM4431


Overview
www.
DataSheet4U.
com TSM4431 30V P-Channel MOSFET PRODUCT SUMMARY VDS (V) RDS(on)(mΩ) -30 40 @ VGS = -10V 70 @ VGS = -4.
5V SOP-8 Pin Definition: 1.
Source 2.
Source 3.
Source 4.
Gate 5, 6, 7, 8.
Drain ID (A) -5.
8 -4.
5 Features ● ● Advance Trench Process Technology High Density Cell Design for Ultra Low On-resistance Block Diagram Application ● ● DC-DC Conversion Asynchronous Buck Converter P-Channel MOSFET Ordering Information Part No.
TSM4431CS RL Package SOP-8 Packing T&R Absolute Maximum Rating (Ta = 25 oC unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Continuous Source Current (Diode Conduction) Maximum Power Dissipation Operating Junction Temperature Operating Junction and Storage Temperature Range a,b o o Symbol VDS VGS ID IDM IS PD Limit -30 ±20 -5.
8 -20 -2.
3 Unit V V A A A W o o Ta = 25 C Ta = 75 C 2.
5 1.
6 +150 - 55 to +150 TJ TJ, TSTG C C Thermal Performance Parameter Junction to Case Thermal Resistance Junction to Ambient Thermal Resistance (PCB mounted) Notes: a.
Pulse width limited by the Maximum junction temperature b.
Surface Mounted on FR4 Board, t ≤ 10 sec.
Symbol RӨJC RӨJA Limit 30 50 Unit o o C/W C/W 1/6 Version: A07 www.
DataSheet4U.
com TSM4431 30V P-Channel MOSFET Electrical Specifications Parameter Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate Body Leakage Zero Gate Voltage Drain Current On-State Drain Current a a Conditions VGS = 0V, ID = -250uA VDS = VGS, ID = -250µ A VGS = ±20V, VDS = 0V VDS = -30V, VGS = 0V VDS ≤ -5V, VGS = -4.
5V VGS = -10V, ID = -5.
8A VGS = -4.
5V, ID = -4.
5A VDS = -15V, ID = -5.
3A IS = -2.
3A, VGS = 0V Symbol BVDSS VGS(TH) IGSS IDSS ID(ON) RDS(ON) gfs VSD Qg Qgs Qgd Ciss Coss Crss td(on) tr td(off) Min -30 -1 ---7 --4 ------------ Typ -----29 47 7 -18.
09 6.
52 3.
25 1047.
98 172.
82 115.
50 20.
52 4.
43 42.
81 7.
35 Max --3 ±100 1.
0 -40 70 --1.
1 ----------- Unit V V nA µA A mΩ S V Drain-Source On-State Resi...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)