DatasheetsPDF.com

TSM4435

Taiwan Semiconductor Company
Part Number TSM4435
Manufacturer Taiwan Semiconductor Company
Description 30V P-Channel MOSFET
Published Mar 5, 2010
Detailed Description www.DataSheet4U.com TSM4435 30V P-Channel MOSFET PRODUCT SUMMARY VDS (V) RDS(on)(mΩ) -30 21 @ VGS = -10V 35 @ VGS = -4...
Datasheet PDF File TSM4435 PDF File

TSM4435
TSM4435

Overview
www.
DataSheet4U.
com TSM4435 30V P-Channel MOSFET PRODUCT SUMMARY VDS (V) RDS(on)(mΩ) -30 21 @ VGS = -10V 35 @ VGS = -4.
5V SOP-8 Pin Definition: 1.
Source 2.
Source 3.
Source 4.
Gate 5, 6, 7, 8.
Drain ID (A) -9.
1 -6.
9 Features ● ● Advance Trench Process Technology High Density Cell Design for Ultra Low On-resistance Block Diagram Application ● ● DC-DC Conversion Battery Switch P-Channel MOSFET Ordering Information Part No.
TSM4435CS RL Package SOP-8 Packing 2.
5Kpcs / 13” Reel Absolute Maximum Rating (Ta = 25oC unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Continuous Source Current (Diode Conduction) Maximum Power Dissipation Operating Junction Temperature Operating Junction and Storage Temperature Range a,b o o Symbol VDS VGS ID IDM IS PD TJ TJ, TSTG Ta = 25 C Ta = 75 C Limit -30 ±20 -9.
1 -50 -2.
1 2.
5 1.
6 +150 - 55 to +150 Unit V V A A A W o o C C Thermal Performance Parameter Junction to Foot (Drain) Thermal Resistance Junction to Ambient Thermal Resistance (PCB mounted) Notes: a.
Pulse width limited by the Maximum junction temperature b.
Surface Mounted on FR4 Board, t ≤ 10 sec.
Symbol RӨJF RӨJA Limit 22 50 Unit o o C/W C/W 1/6 Version: A07 www.
DataSheet4U.
com TSM4435 30V P-Channel MOSFET Electrical Specifications Parameter Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate Body Leakage Zero Gate Voltage Drain Current On-State Drain Current a a Conditions VGS = 0V, ID = -250uA VDS = VGS, ID = -250µ A VGS = ±20V, VDS = 0V VDS = -30V, VGS = 0V VDS = -5V, VGS = -10V VGS = -10V, ID = -9.
1A VGS = -4.
5V, ID = -6.
9A VDS = -10V, ID = -9.
1A IS = -2.
1A, VGS = 0V Symbol BVDSS VGS(TH) IGSS IDSS ID(ON) RDS(ON) gfs VSD Qg Qgs Qgd Ciss Coss Crss td(on) tr td(off) Min -30 -1 ---40 --------------- Typ -----17 25 24 -0.
8 33 5.
8 8.
6 1573 319 211 10 15 110 70 Max --3 ±100 -1.
0 -21 35 --1.
2 70 --1900 -295 15 25 170 110 Unit V V nA µA A mΩ S V Drain-Source On-State...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)