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STP11NM60ND

STMicroelectronics
Part Number STP11NM60ND
Manufacturer STMicroelectronics
Description N-Channel Power MOSFET
Published Mar 18, 2010
Detailed Description STP11NM60ND Datasheet N-channel 600 V, 370 mΩ typ., 10 A FDmesh II Power MOSFET in a TO-220 package Features TAB TO-2...
Datasheet PDF File STP11NM60ND PDF File

STP11NM60ND
STP11NM60ND

Overview
STP11NM60ND Datasheet N-channel 600 V, 370 mΩ typ.
, 10 A FDmesh II Power MOSFET in a TO-220 package Features TAB TO-220 1 23 D(2, TAB) Order code VDS at TJ max.
RDS(on) max.
ID STP11NM60ND 650 V 450 mΩ 10 A • Fast-recovery body diode • Low gate charge and input capacitance • Low on-resistance RDS(on) • 100% avalanche tested • High dv/dt ruggedness Applications • Switching applications G(1) Description S(3) This FDmesh II Power MOSFET with fast-recovery body diode is produced using AM01475v1_noZen MDmesh II technology.
Utilizing a new strip-layout vertical structure, this device features low on-resistance and superior switching performance.
It is ideal for bridge topologies and ZVS phase-shift converters.
Product status link STP11NM60ND Product summary Order code STP11NM60ND Marking 11NM60ND Package TO-220 Packing Tube DS14353 - Rev 1 - June 2023 For further information contact your local STMicroelectronics sales office.
www.
st.
com STP11NM60ND Electrical ratings 1 Electrical ratings Table 1.
Absolute maximum ratings Symbol Parameter VDS Drain-source voltage VGS Gate-source voltage Drain current (continuous) at TC = 25 °C ID Drain current (continuous) at TC = 100 °C IDM(1) Drain current (pulsed) PTOT Total power dissipation at TC = 25 °C dv/dt(2) Peak diode recovery voltage slope Tstg Storage temperature range TJ Maximum operating junction temperature 1.
Pulse width is limited by safe operating area.
2.
ISD ≤ 10 A, di/dt ≤ 400 A/μs, VDS (peak) < V(BR)DSS, VDD = 80% V(BR)DSS.
Symbol RthJC RthJA Table 2.
Thermal data Parameter Thermal resistance, junction-to-case Thermal resistance, junction-to-ambient Value 600 ±25 10 6.
3 40 90 40 -55 to 150 150 Unit V V A A W V/ns °C °C Value 1.
38 62.
5 Unit °C/W °C/W Symbol IAS EAS Table 3.
Avalanche characteristics Parameter Avalanche current, repetitive or non-repetitive (pulse width limited by TJ max.
) Single pulse avalanche energy (starting TJ = 25 °C, ID = IAS, V...


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