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B337

SavantIC
Part Number B337
Manufacturer SavantIC
Description 2SB337
Published Apr 29, 2010
Detailed Description SavantIC Semiconductor www.DataSheet4U.com Product Specification www.DataSheet4U.com Silicon PNP Power Transistors 2S...
Datasheet PDF File B337 PDF File

B337
B337

Overview
SavantIC Semiconductor www.
DataSheet4U.
com Product Specification www.
DataSheet4U.
com Silicon PNP Power Transistors 2SB337 DESCRIPTION ·With TO-3 package ·Low collector saturation voltage APPLICATIONS ·For audio frequency power output applications PINNING(see Fig.
2) PIN 1 2 3 Base Emitter Collector Fig.
1 simplified outline (TO-3) and symbol DESCRIPTION Absolute maximum ratings(Ta= ) SYMBOL VCBO VCEO VEBO IC IE IB PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Emitter current Base current Collector power dissipation Junction temperature Storage temperature TC-55 CONDITIONS Open emitter Open base Open collector VALUE -40 -30 -10 -7 7 -1 30 100 -55~100 UNIT V V V A A A W SavantIC Semiconductor www.
DataSheet4U.
com Product Specification www.
DataSheet4U.
com Silicon PNP Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER CONDITIONS MIN TYP.
2SB337 SYMBOL MAX UNIT V(BR)CEO V(BR)EBO VCEsat VBE ICBO IEBO hFE Collector-emitter breakdown voltage IC=-10mA; IB=0 IE=-1mA; IC=0 IC=-4A; IB=-0.
4A IC=-1A ;VCE=-2V VCB=-30V; IE=0 VEB=-10V; IE=0 IC=-1A ; VCE=-2V -30 V Emitter-base breakdown voltage -10 V Collector-emitter saturation voltage -0.
29 V Base-emittter on voltage -0.
38 V Collector cut-off current -0.
1 mA Emitter cut-off current -0.
1 mA DC current gain 50 90 165 hFE Classifications A 50-100 B 80-165 2 SavantIC Semiconductor www.
DataSheet4U.
com Product Specification www.
DataSheet4U.
com Silicon PNP Power Transistors PACKAGE OUTLINE 2SB337 Fig.
2 outline dimensions (unindicated tolerance:±0.
1mm) 3 ...


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