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HS945

SHANTOU HUASHAN ELECTRONIC
Part Number HS945
Manufacturer SHANTOU HUASHAN ELECTRONIC
Description NPN SILICON TRANSISTOR
Published May 5, 2010
Detailed Description NPN S I L I C O N T R A N S I S T O R www.DataSheet4U.com Shantou Huashan Electronic Devices Co.,Ltd. HS945 ¨€ APPLI...
Datasheet PDF File HS945 PDF File

HS945
HS945

Overview
NPN S I L I C O N T R A N S I S T O R www.
DataSheet4U.
com Shantou Huashan Electronic Devices Co.
,Ltd.
HS945 ¨€ APPLICATIONS The H945 is designed for driver stage of AF amplifier And low speed switching.
¨€ ABSOLUTE MAXIMUM RATINGS£¨ Ta=25¡æ£© T stg ¡ ª ¡ ªStorage Temperature¡-¡-¡¡-¡-¡-¡-¡-¡-¡-55~150¡æ T j ¡ª¡ªJunction Temperature¡-¡-¡-¡-¡-¡-¡-¡-¡-¡-¡-¡-¡150¡æ PC¡ª¡ªCollector Dissipation¡-¡-¡-¡-¡-¡-¡-¡-¡-¡-¡-¡-¡250mW VCBO ¡ ª ¡ ªCollector-Base Voltage¡-¡-¡-¡-¡-¡-¡-¡-¡-¡-¡-¡60V VCEO ¡ª¡ª Collector-Emitter Voltage¡-¡-¡-¡-¡-¡-¡-¡-¡-¡-¡50V VE B O ¡ ª ¡ ªEmitter -Base Voltage¡-¡-¡-¡-¡-¡-¡-¡-¡-¡-¡-¡5V I C ¡ª¡ª Collector Current ¡¡-¡-¡-¡-¡-¡-¡-¡-¡-¡-¡-¡-¡150mA ¨€ 1¨D Emitter£¬ E 2¨D Base£¬ B 3¨D Collector£¬ C TO-92 ELECTRICAL CHARACTERISTICS£¨ Ta=25¡æ£© Characteristics Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Min 60 50 5 Typ Max Unit V V V Test Conditions Symbol BVCBO BVCEO BVEBO HFE VCE(sat) VBE(sat) ICBO IEBO fT Cob NF IC=100...


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