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1N5709B

Part Number	1N5709B
Manufacturer	Advanced Semiconductor
Description	ABRUPT VARACTOR DIODE
Published	May 31, 2010
Detailed Description	1N5709B ABRUPT VARACTOR DIODE PACKAGE STYLE DO-7 DESCRIPTION: The ASI 1N5709B is an Abrupt Varactor Diode, designed for...
Datasheet	1N5709B PDF File

Overview

1N5709B ABRUPT VARACTOR DIODE PACKAGE STYLE DO-7 DESCRIPTION: The ASI 1N5709B is an Abrupt Varactor Diode, designed for general purpose www.
DataSheet4U.
com applications.
MAXIMUM RATINGS IR VR PDISS TJ TSTG θJC 20 nA 70 V 400 mW @ TA = 25 °C -65 °C to +175 °C -65 °C to +200 °C 250 °C/W NONE CHARACTERISTICS SYMBOL VBR IR CT CT4/CT60 Q IR = 10 µA VR = 60 V TC = 25 °C TEST CONDITIONS MINIMUM 65 TYPICAL MAXIMUM 20 UNITS V nA µA pF --- TA = 150 °C VR = 4.
0 V VR = 4.
0 V/VR = 60 V VR = 4.
0 V f = 1.
0 MHz f = 1.
0 MHz f = 50 MHz 77.
9 3.
2 150 20 86.
1 3.
4 A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1202 • FAX (818) 765-3004 Spec...

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