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PIMT1

NXP Semiconductors
Part Number PIMT1
Manufacturer NXP Semiconductors
Description PNP general purpose double transistor
Published Jul 17, 2010
Detailed Description www.DataSheet4U.com DISCRETE SEMICONDUCTORS DATA SHEET dbook, halfpage M3D302 PIMT1 PNP general purpose double trans...
Datasheet PDF File PIMT1 PDF File

PIMT1
PIMT1

Overview
www.
DataSheet4U.
com DISCRETE SEMICONDUCTORS DATA SHEET dbook, halfpage M3D302 PIMT1 PNP general purpose double transistor Product data sheet 2001 Oct 22 www.
DataSheet4U.
com NXP Semiconductors Product data sheet PNP general purpose double transistor FEATURES • 600 mW total power dissipation • Low current (max.
100 mA) • Low voltage (max.
40 V) • Reduces number of components and required PCB area • Reduced pick and place costs.
APPLICATIONS • General purpose switching and amplification.
6 5 4 6 5 PIMT1 PINNING PIN 1, 4 2, 5 6, 3 emitter base collector DESCRIPTION TR1; TR2 TR1; TR2 TR1; TR2 4 TR2 DESCRIPTION PNP transistor pair in an SC-74 (SOT457) plastic package.
MARKING TYPE NUMBER PIMT1 MARKING CODE M1 Fig.
1 1 2 3 MAM457 TR1 1 2 3 Top view Simplified outline (SC74; SOT457) and symbol.
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL Per transistor VCBO VCEO VEBO IC ICM IBM Ptot Tstg Tj Tamb Per device Ptot Note 1.
Device mounted on a printed-circuit board, single sided copper, tinplated and mounting pad for collector 1 cm2.
total power dissipation Tamb ≤ 25 °C; note 1 − 600 mW collector-base voltage collector-emitter voltage emitter-base voltage collector current (DC) peak collector current peak base current total power dissipation storage temperature junction temperature operating ambient temperature Tamb ≤ 25 °C; note 1 open emitter open base open collector − − − − − − − −65 − −65 −50 −40 −5 −100 −200 −200 300 +150 150 +150 V V V mA mA mA mW °C °C °C PARAMETER CONDITIONS MIN.
MAX.
UNIT 2001 Oct 22 2 www.
DataSheet4U.
com NXP Semiconductors Product data sheet PNP general purpose double transistor THERMAL CHARACTERISTICS SYMBOL Rth j-a Note PARAMETER thermal resistance from junction to ambient CONDITIONS note 1 VALUE 208 PIMT1 UNIT K/W 1.
Device mounted on a printed-circuit board, single sided copper, tinplated and mounting pad for collector 1 cm2.
CHARACTERISTICS Tamb = 25 °C unless otherwise spec...


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