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BD738

Inchange Semiconductor
Part Number BD738
Manufacturer Inchange Semiconductor
Description Silicon PNP Power Transistor
Published Feb 8, 2011
Detailed Description isc Silicon PNP Power Transistor BD738 DESCRIPTION ·DC Current Gain - : hFE = 40(Min.)@ IC= -20mA ·Collector-Emitter B...
Datasheet PDF File BD738 PDF File

BD738
BD738


Overview
isc Silicon PNP Power Transistor BD738 DESCRIPTION ·DC Current Gain - : hFE = 40(Min.
)@ IC= -20mA ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -45V(Min.
) ·Complement to Type BD737 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for amplifier and switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -45 V VCEO Collector-Emitter Voltage -45 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -4 A ICM Collector Current-Peak -7 A IB Base Current-Continuous Collector Power Dissipation @ Ta=25℃ PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature -1 A 2 W 40 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website:www.
iscsemi.
com 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= -30mA; IB= 0 V(BR)CBO Collector-Base Breakdown Voltage IC= -0.
1mA; IE= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= -1mA; IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= -2A; IB= -0.
2A VBE(on) Base-Emitter On Voltage IC= -2A; VCE= -1V ICES Collector Cutoff Current VCE= -45V; VBE= 0 hFE-1 DC Current Gain IC= -20mA; VCE= -4V hFE-2 DC Current Gain IC= -2A; VCE= -1V BD738 MIN MAX UNIT -45 V -45 V -5 V -0.
6 V -1.
1 V -0.
2 mA 40 40 NOTICE: ISC reserves the rights to make changes of the content herein the datasheet at any time without notification.
The information contained herein is presented only as a guide for the applications of our products.
ISC products are intended for usage in general electronic equipment.
The products are not designed for use in equipment which require specialized quality and/or reliability, or in equipment which could have applications in hazardous environments, aerospace industry, or m...



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