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TIC226D

Comset Semiconductor
Part Number TIC226D
Manufacturer Comset Semiconductor
Description SILICON BIDIRECTIONAL TRIODE THYRISTOR
Published Mar 6, 2011
Detailed Description SEMICONDUCTORS TIC226A, TIC226B, TIC226C, TIC226D, TIC226E, TIC226M, TIC226N, TIC226S SILICON BIDIRECTIONAL TRIODE THY...
Datasheet PDF File TIC226D PDF File

TIC226D
TIC226D

Overview
SEMICONDUCTORS TIC226A, TIC226B, TIC226C, TIC226D, TIC226E, TIC226M, TIC226N, TIC226S SILICON BIDIRECTIONAL TRIODE THYRISTOR • • • • • • • 8 A RMS 70 A Peak Glass Passivated Wafer 100 V to 800 V Off-State Voltage Max IGT of 50 mA (Quadrants 1-3) High-temperature, High-current and high-voltage applications Compliance to ROHS DESCRIPTION This device is a bidirectional triode thyristor (triac) which may be triggered from the off-state to the on-state by either polarity of gate signal with main Terminal 2 at either polarity.
ABSOLUTE MAXIMUM RATINGS Value A VDRM Symbol Ratings B C Unit M S N V A A A A W W °C °C °C D E Repetitive peak off-state voltage 100 200 300 400 500 600 700 800 (see Note1) Full-cycle RMS on-state current at (or 8 IT(RMS) below) 70°C case temperature (see note2) Peak on-state surge current full-sine-wave 70 ITSM (see Note3) Peak on-state surge current half-sine-wave 8 ITSM (see Note4) Peak gate current ±1 IGM Peak gate power dissipation at (or below) 85°C case temperature (pulse width ≤200 2.
2 PGM µs) Average gate power dissipation at (or 0.
9 PG(AV) below) 85°C case (see Note5) www.
DataSheet4U.
com Operating case temperature range -40 to +110 TC Storage temperature range -40 to +125 Tstg Lead temperature 1.
6 mm from case for 10 230 TL seconds Page 1 of 3 SEMICONDUCTORS TIC226A, TIC226B, TIC226C, TIC226D, TIC226E, TIC226M, TIC226N, TIC226S Notes: 1.
2.
3.
4.
5.
These values apply bidirectionally for any value of resistance between the gate and Main Terminal 1.
This value applies for 50-Hz full-sine-wave operation with resistive load.
Above 85°C derate linearly to 110°C case temperature at the rate of 320 mA/°C.
This value applies for one 50-Hz full-sine-wave when the device is operating at (or below) the rated value of on-state current.
Surge may be repeated after the device has returned to original thermal equilibrium.
During the surge, gate control may be lost.
This value applies for one 50-Hz half-sine-wave when the device is operating ...


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