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TIC226M

Comset Semiconductor
Part Number TIC226M
Manufacturer Comset Semiconductor
Description SILICON BIDIRECTIONAL TRIODE THYRISTOR
Published Mar 6, 2011
Detailed Description SEMICONDUCTORS TIC226A, TIC226B, TIC226C, TIC226D, TIC226E, TIC226M, TIC226N, TIC226S SILICON BIDIRECTIONAL TRIODE THY...
Datasheet PDF File TIC226M PDF File

TIC226M
TIC226M

Overview
SEMICONDUCTORS TIC226A, TIC226B, TIC226C, TIC226D, TIC226E, TIC226M, TIC226N, TIC226S SILICON BIDIRECTIONAL TRIODE THYRISTOR • • • • • • • 8 A RMS 70 A Peak Glass Passivated Wafer 100 V to 800 V Off-State Voltage Max IGT of 50 mA (Quadrants 1-3) High-temperature, High-current and high-voltage applications Compliance to ROHS DESCRIPTION This device is a bidirectional triode thyristor (triac) which may be triggered from the off-state to the on-state by either polarity of gate signal with main Terminal 2 at either polarity.
ABSOLUTE MAXIMUM RATINGS Value A VDRM Symbol Ratings B C Unit M S N V A A A A W W °C °C °C D E Repetitive peak off-state voltage 100 200 300 400 500 600 700 800 (see Note1) Full-cycle RMS on-state current at (or 8 IT(RMS) below) 70°C case temperature (see note2) Peak on-state surge current full-sine-wave 70 ITSM (see Note3) Peak on-state surge current half-sine-wave 8 ITSM (see Note4) Peak gate current ±1 IGM Peak gate power dissipation at (or below) 85°C case...


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