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2SC2026

Part Number	2SC2026
Manufacturer	Inchange
Description	Silicon NPN RF Transistor
Published	May 2, 2011
Detailed Description	isc Silicon NPN RF Transistor INCHANGE Semiconductor 2SC2026 DESCRIPTION ·Low Noise NF= 3.0dB TYP. @ f= 500MHz ·High P...
Datasheet	2SC2026 PDF File

Overview

isc Silicon NPN RF Transistor INCHANGE Semiconductor 2SC2026 DESCRIPTION ·Low Noise NF= 3.
0dB TYP.
@ f= 500MHz ·High Power Gain Gpe= 15dB TYP.
@ f= 500MHz ·High Gain Bandwidth Product fT= 2.
0GHz TYP.
·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in low noise amplifiers in the VHF~UHF band.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 30 V VCEO Collector-Emitter Voltage 14 V VEBO Emitter-Base Voltage 3 V IC Collector Current-Continuous PC Collector Power Dissipation @TC=25℃ TJ Junction Temperature 50 mA 0.
25 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.
iscsemi.
cn 1 isc & iscsemi is registered trademark isc Silicon NPN RF Transistor INCHANGE Semiconductor 2SC2026 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP.
MAX UNIT ICBO Collector Cutoff ...

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