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LS830

Part Number	LS830
Manufacturer	Micross
Description	Low Leakage
Published	Jun 13, 2011
Detailed Description	LS830 MONOLITHIC DUAL N-CHANNEL JFET Linear Systems Ultra Low Leakage Low Drift Monolithic Dual JFET The LS830 is a hig...
Datasheet	LS830 PDF File

Overview

LS830 MONOLITHIC DUAL N-CHANNEL JFET Linear Systems Ultra Low Leakage Low Drift Monolithic Dual JFET The LS830 is a high-performance monolithic dual JFET featuring extremely low noise, tight offset voltage and low drift over temperature specifications, and is targeted for use in a wide range of precision instrumentation applications.
The LS830 features a 5mV offset and 10-µV/°C drift.
The 8 Pin P-DIP and 8 Pin SOIC provide ease of manufacturing, and the symmetrical pinout prevents improper orientation.
(See Packaging Information).
FEATURES ULTRA LOW DRIFT | V GS1‐2 / T| ≤ 5µV/°C TYP.
ULTRA LOW LEAKGE IG = 80fA TYP.
LOW NOISE en = 70nV/√Hz TYP.
LOW CAPACITANCE CISS = 3pF MAX.
ABSOLU...

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