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2SA1879

Inchange Semiconductor
Part Number 2SA1879
Manufacturer Inchange Semiconductor
Description Power Transistor
Published Jun 30, 2011
Detailed Description isc Silicon PNP Power Transistor DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= -80(V)(Min.) ·Low Coll...
Datasheet PDF File 2SA1879 PDF File

2SA1879
2SA1879

Overview
isc Silicon PNP Power Transistor DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= -80(V)(Min.
) ·Low Collector Saturation Voltage :VCE(sat)= -0.
3(V)(Max.
)@IC= -3.
5A ·Large Current Capability-IC= -7A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use as a driver in DC/DC converters and actuators.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -80 V VCEO Collector-Emitter Voltage -80 V VEBO Emitter-Base Voltage -7 V IC Collector Current-Continuous -7 A ICM Collector Current-Peak -14 A IB Base Current-Continuous -1.
5 A IBM Base Current-Peak PC Total Power Dissipation @ TC=25℃ TJ Junction Temperature -2 A 25 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 5 ℃/W INCHANGE Semiconductor 2SA1879 isc website：www.
iscsemi.
cn 1 isc & ...


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