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2SA1645

Inchange Semiconductor
Part Number 2SA1645
Manufacturer Inchange Semiconductor
Description POWER TRANSISTOR
Published Jun 30, 2011
Detailed Description isc Silicon PNP Power Transistor DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= -100V(Min) ·High DC Cu...
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2SA1645
2SA1645

Overview
isc Silicon PNP Power Transistor DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= -100V(Min) ·High DC Current Gain- : hFE= 100(Min)@ (VCE= -2V , IC= -1A) ·Low Saturation Voltage- : VCE(sat)= -0.
3V(Max)@ (IC= -4A, IB= -0.
2A) ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Developed for use in switching power supplies, DC/DC converters, motor drivers, solenoid drivers, and other low-voltage power supply devices, as well as for highcurrent switching.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -150 V VCEO Collector-Emitter Voltage -100 V VEBO Emitter-Base Voltage -7.
0 V IC Collector Current-Continuous -7.
0 A ICM Collector Current-Peak -14 A IB Base Current-Continuous Collector Power Dissipation @ Ta=25℃ PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature -3.
5 A 1.
5 W 35 150 ℃ Tstg Storage Temperature Range -55...


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